Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Novellus' 32nm UV-Absorbing Dielectric Films Key to Improved Device Reliability

Figure 1: Amount of UV intensity transmitted to the Cu interface through a 300nm ULK/20nm thick dielectric barrier stack at 220nm incident wavelength. Figure 2: Integrated dielectric/diffusion barrier/copper stack. (PRNewsFoto/Novellus Systems, Inc.)
Figure 1: Amount of UV intensity transmitted to the Cu interface through a 300nm ULK/20nm thick dielectric barrier stack at 220nm incident wavelength. Figure 2: Integrated dielectric/diffusion barrier/copper stack. (PRNewsFoto/Novellus Systems, Inc.)

Abstract:
Dense ULK and Diffusion Barrier Stack Absorbs Order-of-Magnitude More UV Radiation Than Porous Interconnect Alternatives

Novellus' 32nm UV-Absorbing Dielectric Films Key to Improved Device Reliability

San Jose, CA | Posted on May 6th, 2009

In order for RC delay to continue to scale in accordance with the International Technology Roadmap for Semiconductors (ITRS), device manufacturers are integrating ultra-low k (ULK) dielectric materials into their 32 nm process flows. At the same time, UltraViolet Thermal Processing (UVTP) is being introduced into the semiconductor manufacturing process to improve the mechanical properties of these ULK materials, making them more robust for subsequent Chemical Mechanical Planarization (CMP) and packaging operations. However, the UVTP process can alter the nature of the stress of the ULK film stack at the copper-dielectric interface. While it is widely accepted that maintaining a compressive stress at this interface can positively impact copper electromigration and film stack reliability, exposing some dielectric films to UV radiation can shift the stress in the film from compressive to tensile, which will negatively affect device performance.

Novellus (Nasdaq: NVLS) has developed a suite of 32nm dielectric films which significantly reduce the transmission of UV radiation to the critical copper-dielectric interface, maintaining a compressive stress in this region and hence device reliability. Figure 1 shows that the Novellus interconnect stack, consisting of a dense ULK and a low-k diffusion barrier, transmits an order-of-magnitude lower UV intensity (220nm wavelength) in comparison to a porous ULK solution. The improved UV absorption of Novellus' ULK film stack is a direct result of the chemical composition of the film. Figure 2 shows the integration of a multi-layer diffusion barrier beneath the dense ULK film. This unique barrier was designed to remain compressive after UV exposure and protect the copper-dielectric interface. Novellus' Multi-Station Sequential Processing (MSSP) architecture ensures that the multi-layer barrier can be deposited in a single pass with high productivity.

"Some 32nm ULK inter-metal dielectric and diffusion barrier films can be negatively impacted by UVTP, changing the stress on the underlying copper-dielectric interface," said Andy Antonelli, technology manager at Novellus' PECVD business. "Relative to competitive offerings, the greater UV absorption capabilities of the new Novellus films preserves the compressive stress at this critical interface and thus minimizes reliability concerns."

For more information regarding the use of dielectric diffusion barriers resistant to UV, go to www.novellustechnews.com.

About Novellus' PECVD Technology:

For high-volume manufacturing applications at 45nm and beyond, Novellus' advanced low-k, ILD, IMD, and dielectric diffusion barrier films offer the lowest k-effective, superior RC control, and an easily integrated low-cost dielectric solution.

####

About Novellus Systems, Inc.
Novellus Systems, Inc. (Nasdaq: NVLS) is a leading provider of advanced process equipment for the global semiconductor industry. The company's products deliver value to customers by providing innovative technology backed by trusted productivity. An S&P 500 company, Novellus is headquartered in San Jose, Calif. with subsidiary offices across the globe.

For more information, please click here

Copyright © PR Newswire Association LLC.

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Iranian Researchers Synthesize Stable Ceramic Nanopowders at Room Temperature September 20th, 2014

Arrowhead to Present at BioCentury's NewsMakers in the Biotech Industry Conference September 19th, 2014

SouthWest NanoTechnologies (SWeNT) Receives NIST Small Business Innovation Research (SBIR) Phase 1 Award to Produce Greater than 99% Semiconducting Single-Wall Carbon Nanotubes September 19th, 2014

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

Chip Technology

SouthWest NanoTechnologies (SWeNT) Receives NIST Small Business Innovation Research (SBIR) Phase 1 Award to Produce Greater than 99% Semiconducting Single-Wall Carbon Nanotubes September 19th, 2014

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

IEEE International Electron Devices Meeting To Celebrate 60th Anniversary as The Leading Technical Conference for Advanced Semiconductor Devices September 18th, 2014

‘Small’ transformation yields big changes September 16th, 2014

Announcements

Iranian Scientists Separate Zinc Ion at Low Concentrations September 20th, 2014

Arrowhead to Present at BioCentury's NewsMakers in the Biotech Industry Conference September 19th, 2014

SouthWest NanoTechnologies (SWeNT) Receives NIST Small Business Innovation Research (SBIR) Phase 1 Award to Produce Greater than 99% Semiconducting Single-Wall Carbon Nanotubes September 19th, 2014

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

Tools

IEEE International Electron Devices Meeting To Celebrate 60th Anniversary as The Leading Technical Conference for Advanced Semiconductor Devices September 18th, 2014

FEI Opens New Technology Center in Czech Republic: FEI expands its presence in Brno with the opening of a new, larger facility September 18th, 2014

New NPZ100-403 Piezo Stage from nPoint Inc. September 17th, 2014

Researchers Create World’s Largest DNA Origami September 11th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE