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Home > Press > Fujitsu Microelectronics Provides Advanced 65nm RF CMOS Process Design Kit: Platforms are Ideal for High-performance and Low-power Wireless SoCs

Abstract:
Fujitsu Microelectronics America, Inc. (FMA) today announced the availability of 65nm RF CMOS manufacturing services with the introduction of an advanced Process Design Kit (PDK) to enable first-pass silicon success. The RF CMOS platforms from Fujitsu are now available to customers in 90nm and 65nm nodes.

Fujitsu Microelectronics Provides Advanced 65nm RF CMOS Process Design Kit: Platforms are Ideal for High-performance and Low-power Wireless SoCs

SUNNYVALE, CA | Posted on November 12th, 2008

The RF CMOS PDKs are ideal for developing high-performance, low-power SoCs that integrate RF functions for Bluetooth, GPS, cellular, wireless audio/video, wireless LAN and optical communications. The highly accurate transistor models include both advanced PSP and traditional BSIM models. The PDK's superior model accuracy and improved ease of use enable engineers to design challenging mixed-signal and RF ICs easily.

Based on the Fujitsu low leakage 90nm and 65nm analog/RF CMOS process technologies, the PDKs include a comprehensive set of parameterized cells and toolkits for active and passive devices. The flexible inductor synthesis toolkit automatically generates precise and scalable inductor layout and models for high-speed analog and RF circuits. The sophisticated statistical simulation environment is a powerful tool for yield analysis, process sensitivity and design space exploration. The result for customers is reduced development time and rapid time-to-market.

"Our platforms ensure that our customers achieve first-pass functional silicon at the 90- and 65-nanometer process nodes for high-performance, low-power RF CMOS IC designs, avoiding costly re-spins and low yields," said Steve Della Rocchetta, vice president of the Semiconductor Manufacturing Services business group at Fujitsu Microelectronics America.

"The main advantage of the Fujitsu RF CMOS processes is the ability to integrate complex logic, analog and RF circuits into single chip," said Tatsuya Yamazaki, vice president, in charge of the ASIC/COT business for Fujitsu Microelectronics Limited in Japan. "Built on the Fujitsu advanced process technologies, accurate device models, and comprehensive IP portfolios, the Fujitsu low-power RF CMOS technology platforms are exceptional choices for next-generation, high-volume wireless applications."

Availability

Both the 90nm CS100A-LL and 65nm CS200L PDKs are available now. Customers are using the design kits for their leading-edge, high-precision analog and high-speed RF applications.

Fujitsu has issued a new white paper entitled "Motivation for RF Integration," which discusses the many opportunities for the semiconductor industry that have been created by the proliferation of wireless applications, ranging from cellular phones to wireless audio/video products. Although major components in traditional wireless systems have long been fabricated in a variety of CMOS and compound semiconductor process technologies, recent advances in RF CMOS have made it the technology of choice for these applications. RF CMOS is contributing significantly to the success of wireless products in the marketplace. The new white paper is available at
www.fujitsu.com/downloads/MICRO/fma/formpdf/sms_rfcmos.pdf

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About Fujitsu Microelectronics America, Inc. (FMA)
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products, design and manufacturing services for the wireless, networking, consumer, automotive, and other markets throughout North and South America.

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Contacts:
Corporate Headquarters
Tel: 408-737-5600
Toll free: 800-866-8608
Fax: 408-737-5999

Address:
1250 East Arques Avenue, M/S 333
Sunnyvale, CA
USA
94085-5401

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