Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

Abstract:
IBM Corporation (NYSE: IBM) and NEC Electronics Corporation (TSE: 6723) today announced they have entered into a multi-year joint development agreement under which they will develop next-generation semiconductor process technology.

IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

ARMONK, NY and KAWASAKI, JAPAN | Posted on September 11th, 2008

Under the agreement, NEC Electronics will participate in a joint development project for the next-generation core CMOS process, at the 32-nm node, and in advanced fundamental research for leading-edge semiconductor technologies of the future.

NEC Electronics will be the eighth major semiconductor manufacturer represented in the IBM joint development alliance aimed to further advance performance and power improvements for next generation silicon technologies.

"As the 'scaling' of semiconductors to ever smaller feature sizes continues, the cost of conducting basic research and development and the associated capital investment continues to rise," said Gary Patton, vice president, IBM Semiconductor Research & Development Center. "Our unique collaborative model for semiconductor research and development helps to mitigate individual investment while allowing for increased design complexity, shortened time-to-market and quicker integration of next-generation process materials and technology nodes."

NEC Electronics co-develops the 45-nm and 32-nm CMOS process technology nodes with Toshiba Corporation and is now extending that scope of collaboration to include the 32-nm and finer nodes with IBM and its alliance partners. NEC Electronics intends to work with IBM and its research partners to develop a common process platform, and strengthen development and design ability in System-on-Chip (SoC).

"At the highest levels of technology, it is becoming increasingly difficult for semiconductor companies to differentiate their products on the core CMOS process technologies alone. A better course is to share the development costs of a common process platform with leading semiconductor manufacturers from around the world," said Toshio Nakajima, President and CEO, NEC Electronics. "The new agreement with IBM means that NEC Electronics will develop a common semiconductor process with industry leaders, allowing us to focus on being first to market in areas of eDRAM products and SoC solutions that provide our customers with the added value, such as high reliability and low power consumption."

The work will be conducted at IBM's state-of-the-art 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. and at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany, State University of New York. CNSE's Albany NanoTech is the world's most advanced university-based nanoelectronics research complex.

Earlier this year, IBM and its partners unveiled significant performance and power advantages over industry standards by using a breakthrough material known as "high-k/metal gate" (HKMG) on silicon manufactured at IBM's 300 millimeter semiconductor fabrication facility in East Fishkill, N.Y. By implementing "high-k/metal gate" technology into its leading edge 32-nm technology node, the alliance has assessed performance improvements in circuits of up to 35 percent over 45-nm technology at the same operating voltage. The 32-nm power reduction over 45-nm can be as much as 30 to 50 percent depending on the operating voltage.

IBM's other joint development partners include, Chartered Semiconductor Manufacturing Ltd. (Chartered), Freescale Inc., Infineon Technologies AG, Samsung Electronics Co., Ltd. (Samsung), STMicroelectronics N.V. and Toshiba Corporation.

####

For more information, please click here

Contacts:
Michael Loughran
IBM Media Relations
914-945-1613


Hisashi Saito
NEC Electronics Corporation
+81 44-435-1676 (Japan)

Copyright © Marketwire

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Fast, efficient sperm tails inspire nanobiotechnology December 5th, 2016

Journal Nanotechnology Progress International (JONPI) Volume 6, issue 2 coming out soon! December 5th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Chip Technology

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Shape matters when light meets atom: Mapping the interaction of a single atom with a single photon may inform design of quantum devices December 4th, 2016

Quantum obstacle course changes material from superconductor to insulator December 1st, 2016

Bumpy surfaces, graphene beat the heat in devices: Rice University theory shows way to enhance heat sinks in future microelectronics November 29th, 2016

Announcements

Fast, efficient sperm tails inspire nanobiotechnology December 5th, 2016

Journal Nanotechnology Progress International (JONPI) Volume 6, issue 2 coming out soon! December 5th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Alliances/Trade associations/Partnerships/Distributorships

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Leti and Grenoble Partners Demonstrate World’s 1st Qubit Device Fabricated in CMOS Process: Paper by Leti, Inac and University of Grenoble Alpes Published in Nature Communications November 28th, 2016

Mechanism for sodium storage in 2-D material: Tin selenide is an effective host for storing sodium ions, making it a promising material for sodium ion batteries October 27th, 2016

Enterprise In Space Partners with Sketchfab and 3D Hubs for NewSpace Education October 13th, 2016

Research partnerships

Deep insights from surface reactions: Researchers use Stampede supercomputer to study new chemical sensing methods, desalination and bacterial energy production December 2nd, 2016

Quantum obstacle course changes material from superconductor to insulator December 1st, 2016

Novel silicon etching technique crafts 3-D gradient refractive index micro-optics November 28th, 2016

Single photon converter -- a key component of quantum internet November 28th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project