Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

Abstract:
IBM Corporation (NYSE: IBM) and NEC Electronics Corporation (TSE: 6723) today announced they have entered into a multi-year joint development agreement under which they will develop next-generation semiconductor process technology.

IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

ARMONK, NY and KAWASAKI, JAPAN | Posted on September 11th, 2008

Under the agreement, NEC Electronics will participate in a joint development project for the next-generation core CMOS process, at the 32-nm node, and in advanced fundamental research for leading-edge semiconductor technologies of the future.

NEC Electronics will be the eighth major semiconductor manufacturer represented in the IBM joint development alliance aimed to further advance performance and power improvements for next generation silicon technologies.

"As the 'scaling' of semiconductors to ever smaller feature sizes continues, the cost of conducting basic research and development and the associated capital investment continues to rise," said Gary Patton, vice president, IBM Semiconductor Research & Development Center. "Our unique collaborative model for semiconductor research and development helps to mitigate individual investment while allowing for increased design complexity, shortened time-to-market and quicker integration of next-generation process materials and technology nodes."

NEC Electronics co-develops the 45-nm and 32-nm CMOS process technology nodes with Toshiba Corporation and is now extending that scope of collaboration to include the 32-nm and finer nodes with IBM and its alliance partners. NEC Electronics intends to work with IBM and its research partners to develop a common process platform, and strengthen development and design ability in System-on-Chip (SoC).

"At the highest levels of technology, it is becoming increasingly difficult for semiconductor companies to differentiate their products on the core CMOS process technologies alone. A better course is to share the development costs of a common process platform with leading semiconductor manufacturers from around the world," said Toshio Nakajima, President and CEO, NEC Electronics. "The new agreement with IBM means that NEC Electronics will develop a common semiconductor process with industry leaders, allowing us to focus on being first to market in areas of eDRAM products and SoC solutions that provide our customers with the added value, such as high reliability and low power consumption."

The work will be conducted at IBM's state-of-the-art 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. and at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany, State University of New York. CNSE's Albany NanoTech is the world's most advanced university-based nanoelectronics research complex.

Earlier this year, IBM and its partners unveiled significant performance and power advantages over industry standards by using a breakthrough material known as "high-k/metal gate" (HKMG) on silicon manufactured at IBM's 300 millimeter semiconductor fabrication facility in East Fishkill, N.Y. By implementing "high-k/metal gate" technology into its leading edge 32-nm technology node, the alliance has assessed performance improvements in circuits of up to 35 percent over 45-nm technology at the same operating voltage. The 32-nm power reduction over 45-nm can be as much as 30 to 50 percent depending on the operating voltage.

IBM's other joint development partners include, Chartered Semiconductor Manufacturing Ltd. (Chartered), Freescale Inc., Infineon Technologies AG, Samsung Electronics Co., Ltd. (Samsung), STMicroelectronics N.V. and Toshiba Corporation.

####

For more information, please click here

Contacts:
Michael Loughran
IBM Media Relations
914-945-1613


Hisashi Saito
NEC Electronics Corporation
+81 44-435-1676 (Japan)

Copyright © Marketwire

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Unveiling the quantum necklace: Researchers simulate quantum necklace-like structures in superfluids May 26th, 2017

Chip Technology

Researchers find new way to control light with electric fields May 25th, 2017

Nanometrics Announces Retirement Plans of CEO Timothy Stultz: Dr. Stultz to Continue as Director May 25th, 2017

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Plasmon-powered upconversion nanocrystals for enhanced bioimaging and polarized emission: Plasmonic gold nanorods brighten lanthanide-doped upconversion superdots for improved multiphoton bioimaging contrast and enable polarization-selective nonlinear emissions for novel nanoscal May 19th, 2017

Announcements

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Unveiling the quantum necklace: Researchers simulate quantum necklace-like structures in superfluids May 26th, 2017

Alliances/Trade associations/Partnerships/Distributorships

California Research Alliance by BASF establishes more than 25 research projects in three years April 26th, 2017

BASF and Landa partner to create revolutionary pigments for automotive coatings: The alliance combines BASF innovations with Landa nano-pigment technology April 5th, 2017

Leti Announces EU/South Korean Project for Worlds First 5G-system Prototype: Coinciding with the 2018 Winter Games in PyeongChang, Korea, Prototype Will Be First Time State-of-the-art Terrestrial Wireless Communication Is Seamlessly Combined with Disruptive Satellite Communicati April 4th, 2017

ATTOPSEMI Technology Joins FDXcelerator Program to Deliver Advanced Non-Volatile Memory IP to GLOBALFOUNDRIES 22 FDX Technology Platform: Leading-edge I-fuse brings higher reliability, smaller cell size and ease of programmability for consumer, automotive, and IoT applications March 27th, 2017

Research partnerships

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

Three-dimensional graphene: Experiment at BESSY II shows that optical properties are tuneable May 24th, 2017

Zap! Graphene is bad news for bacteria: Rice, Ben-Gurion universities show laser-induced graphene kills bacteria, resists biofouling May 22nd, 2017

Sensors detect disease markers in breath May 19th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project