Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

Abstract:
IBM Corporation (NYSE: IBM) and NEC Electronics Corporation (TSE: 6723) today announced they have entered into a multi-year joint development agreement under which they will develop next-generation semiconductor process technology.

IBM and NEC Electronics Sign Agreement for Joint Development of Next-Generation Semiconductor Process Technology

ARMONK, NY and KAWASAKI, JAPAN | Posted on September 11th, 2008

Under the agreement, NEC Electronics will participate in a joint development project for the next-generation core CMOS process, at the 32-nm node, and in advanced fundamental research for leading-edge semiconductor technologies of the future.

NEC Electronics will be the eighth major semiconductor manufacturer represented in the IBM joint development alliance aimed to further advance performance and power improvements for next generation silicon technologies.

"As the 'scaling' of semiconductors to ever smaller feature sizes continues, the cost of conducting basic research and development and the associated capital investment continues to rise," said Gary Patton, vice president, IBM Semiconductor Research & Development Center. "Our unique collaborative model for semiconductor research and development helps to mitigate individual investment while allowing for increased design complexity, shortened time-to-market and quicker integration of next-generation process materials and technology nodes."

NEC Electronics co-develops the 45-nm and 32-nm CMOS process technology nodes with Toshiba Corporation and is now extending that scope of collaboration to include the 32-nm and finer nodes with IBM and its alliance partners. NEC Electronics intends to work with IBM and its research partners to develop a common process platform, and strengthen development and design ability in System-on-Chip (SoC).

"At the highest levels of technology, it is becoming increasingly difficult for semiconductor companies to differentiate their products on the core CMOS process technologies alone. A better course is to share the development costs of a common process platform with leading semiconductor manufacturers from around the world," said Toshio Nakajima, President and CEO, NEC Electronics. "The new agreement with IBM means that NEC Electronics will develop a common semiconductor process with industry leaders, allowing us to focus on being first to market in areas of eDRAM products and SoC solutions that provide our customers with the added value, such as high reliability and low power consumption."

The work will be conducted at IBM's state-of-the-art 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. and at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany, State University of New York. CNSE's Albany NanoTech is the world's most advanced university-based nanoelectronics research complex.

Earlier this year, IBM and its partners unveiled significant performance and power advantages over industry standards by using a breakthrough material known as "high-k/metal gate" (HKMG) on silicon manufactured at IBM's 300 millimeter semiconductor fabrication facility in East Fishkill, N.Y. By implementing "high-k/metal gate" technology into its leading edge 32-nm technology node, the alliance has assessed performance improvements in circuits of up to 35 percent over 45-nm technology at the same operating voltage. The 32-nm power reduction over 45-nm can be as much as 30 to 50 percent depending on the operating voltage.

IBM's other joint development partners include, Chartered Semiconductor Manufacturing Ltd. (Chartered), Freescale Inc., Infineon Technologies AG, Samsung Electronics Co., Ltd. (Samsung), STMicroelectronics N.V. and Toshiba Corporation.

####

For more information, please click here

Contacts:
Michael Loughran
IBM Media Relations
914-945-1613


Hisashi Saito
NEC Electronics Corporation
+81 44-435-1676 (Japan)

Copyright © Marketwire

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Nanoparticles could allow for faster, better medicine: Exposure of nanoparticles in the body allows for more effective delivery November 20th, 2017

ICN2 researchers compute unprecedented values for spin lifetime anisotropy in graphene November 17th, 2017

Math gets real in strong, lightweight structures: Rice University researchers use 3-D printers to turn century-old theory into complex schwarzites November 16th, 2017

The stacked color sensor: True colors meet minimization November 16th, 2017

Chip Technology

ICN2 researchers compute unprecedented values for spin lifetime anisotropy in graphene November 17th, 2017

Nanometrics to Participate in the 6th Annual NYC Investor Summit 2017 November 16th, 2017

GLOBALFOUNDRIES Demonstrates Industry-Leading 112G Technology for Next-Generation Connectivity Solutions: High bandwidth, low power SerDes IP portfolio enables ‘connected intelligence’ in data centers and networking applications November 15th, 2017

Nanometrics Announces $50 Million Share Repurchase Program November 15th, 2017

Announcements

Nanoparticles could allow for faster, better medicine: Exposure of nanoparticles in the body allows for more effective delivery November 20th, 2017

ICN2 researchers compute unprecedented values for spin lifetime anisotropy in graphene November 17th, 2017

Math gets real in strong, lightweight structures: Rice University researchers use 3-D printers to turn century-old theory into complex schwarzites November 16th, 2017

The stacked color sensor: True colors meet minimization November 16th, 2017

Alliances/Trade associations/Partnerships/Distributorships

EC Project Aims at Creating and Commercializing Cyber-Physical-System Solutions November 14th, 2017

GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card November 14th, 2017

Leti Coordinating Project to Develop Innovative Drivetrains for 3rd-generation Electric Vehicles: CEA Tech’s Contribution Includes Liten’s Knowhow in Magnetic Materials and Simulation And Leti’s Expertise in Wide-bandgap Semiconductors October 20th, 2017

More 22 of 59,885 Print all In new window Leti to Present Update of CoolCube/3DVLSI Technologies Development at 2017 IEEE S3S: Future Developments and Tape-Out Vehicles to Be Presented during Oct. 17 Workshop October 12th, 2017

Research partnerships

EC Project Aims at Creating and Commercializing Cyber-Physical-System Solutions November 14th, 2017

Leti Joins DARPA-Funded Project to Develop Implantable Device for Restoring Vision November 9th, 2017

Nanoshells could deliver more chemo with fewer side effects: In vitro study verifies method for remotely triggering release of cancer drugs November 8th, 2017

Ames Laboratory, UConn discover superconductor with bounce October 25th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project