Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > IMEC and AIXTRON set important step towards low-cost GaN power devices

Abstract:
IMEC, an independent European research center in the field of nanoelectronics, and AIXTRON, a metal-organic chemical-vapor deposition (MOCVD) equipment supplier, have demonstrated the growth of high-quality and uniform AlGaN/GaN heterostructures on 200mm silicon wafers. This demonstration is a milestone towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.

IMEC and AIXTRON set important step towards low-cost GaN power devices

Leuven, Belgium | Posted on June 3rd, 2008

IMEC and AIXTRON deposited, for the first time ever, crack-free AlGaN/GaN structures onto 200mm Si(111) wafers. The layers show good crystalline quality as measured by high-resolution x-ray diffraction (HR-XRD). Excellent morphology and uniformity were obtained as well. The high-quality AlGaN and GaN layers were grown in AIXTRON's application laboratory on the 300mm CRIUS metal-organic chemical-vapor-phase epitaxy (MOVPE) reactor.

"The demonstration of GaN growth on 200mm Si wafers is an important step towards processing GaN devices on large Si wafers", said Marianne Germain, Program Manager of IMEC's Efficient Power program. "There is a strong demand for GaN-based solid-state switching devices in the field of power conversion. However, bringing GaN devices to a level acceptable for most applications requires a drastic reduction in the cost of this technology. And that is only possible by processing on large-diameter Si wafers. 150mm, and then 200mm are the minimum wafer sizes we need to fully leverage today's silicon processing capabilities." The bow of the resulting wafers is still quite large, in the range of 100m; but IMEC believes that an optimized buffer can reduce this bow drastically, enabling further processing. Marianne Germain: "We aim to further develop the growth process and to qualify the wafers to be compatible with Si-CMOS process."

Gallium nitride (GaN) has outstanding capabilities for power, low-noise, high-frequency, high-temperature operations, even in harsh environment (radiation); it considerably extends the application field of solid-state devices. Due to the lack of commercially available GaN substrates, GaN heterostructures are nowadays grown mainly on sapphire and silicon carbide (SiC). Si is a very attractive alternative, being much cheaper than sapphire and SiC. Other benefits include the acceptable thermal conductivity of Si (half of that of SiC) and its availability in large quantities and large wafer sizes. But until now, Si wafers with (111) surface orientation were only available with a diameter up to 150mm. The 200mm wafers were custom-made by MEMC Electronic Materials, Inc. using the Czochralski growth (CZ) method. CZ wafers are ideally suited for switching applications with large breakdown voltages. For such devices, the performance is independent of the resistivity of the Si substrate.

Process details

For the AlGaN/GaN heterostructures, a standard layer stack, that had already been successfully demonstrated on 100 and 150mm Si(111) substrates, was used.
First an AlN layer was deposited onto the Si substrate, followed by an AlGaN buffer which provides compressive stress in the 1 micron thick GaN top layer. The stack was finished with a 20nm thin AlGaN (26% Al) layer and capped with a 2nm GaN layer. From in-situ measurements, researchers from IMEC were able to extract the thickness uniformity of the different layers which show a standard deviation well below 1% over the full 200mm wafers (5mm EE).

####

About IMEC
IMEC is Europe's leading independent research center in the field of micro- and nanoelectronics, nanotechnology, enabling design methods and technologies for ICT systems.

For more information, please click here

Contacts:
IMEC
Kapeldreef 75
B-3001 Leuven
Belgium
Phone: +32 16 28 12 11
Fax: +32 16 22 94 00

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Harris & Harris Group Notes Announcements by Its Portfolio Companies During the Third Quarter of 2016 September 30th, 2016

INVECAS to Enable ASIC Designs for Tomorrows Intelligent Systems on GLOBALFOUNDRIES' FDX Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX and 12FDX Technologies September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Innovation in Nanotechnology is Focus of Symposium: Annual event brings international experts to Northwestern Oct. 6 September 29th, 2016

Chip Technology

INVECAS to Enable ASIC Designs for Tomorrows Intelligent Systems on GLOBALFOUNDRIES' FDX Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX and 12FDX Technologies September 30th, 2016

Picosun patents ALD nanolaminate to prevent electronics from overheating September 28th, 2016

Researchers at the Catalan Institute of Nanoscience and Nanotechnology show that bending semiconductors generates electricity September 26th, 2016

Mexican scientist in the Netherlands seeks to achieve data transmission ... speed of light September 20th, 2016

Nanoelectronics

Mexican scientist in the Netherlands seeks to achieve data transmission ... speed of light September 20th, 2016

GLOBALFOUNDRIES to Deliver Industrys Leading-Performance Offering of 7nm FinFET Technology: Company extends its leading-edge roadmap for products demanding the ultimate processing power September 15th, 2016

Semiconducting inorganic double helix: New flexible semiconductor for electronics, solar technology and photo catalysis September 15th, 2016

A versatile method to pattern functionalized nanowires: A team of researchers from Hokkaido University has developed a versatile method to pattern the structure of 'nanowires,' providing a new tool for the development of novel nanodevices September 9th, 2016

Announcements

Harris & Harris Group Notes Announcements by Its Portfolio Companies During the Third Quarter of 2016 September 30th, 2016

INVECAS to Enable ASIC Designs for Tomorrows Intelligent Systems on GLOBALFOUNDRIES' FDX Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX and 12FDX Technologies September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Innovation in Nanotechnology is Focus of Symposium: Annual event brings international experts to Northwestern Oct. 6 September 29th, 2016

Alliances/Trade associations/Partnerships/Distributorships

INVECAS to Enable ASIC Designs for Tomorrows Intelligent Systems on GLOBALFOUNDRIES' FDX Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX and 12FDX Technologies September 30th, 2016

PHENOMEN is a FET-Open Research Project aiming to lay the foundations a new information technology September 19th, 2016

SEMI and MSIG Join Together in Strategic Association Partnership: MEMS & Sensors Industry Group Brings New MEMS and Sensors Community to SEMI to Increase Combined Member Value September 15th, 2016

Leti and Oberthur Technologies Partner to Explore New Solutions in Fast-growing Digital Era September 12th, 2016

Research partnerships

INVECAS to Enable ASIC Designs for Tomorrows Intelligent Systems on GLOBALFOUNDRIES' FDX Technology: INVECAS to Collaborate with GLOBALFOUNDRIES to Provide IP and End-to-End ASIC Design Services on 22FDX and 12FDX Technologies September 30th, 2016

How to power up graphene implants without frying cells: New analysis finds way to safely conduct heat from graphene to biological tissues September 30th, 2016

Crystalline Fault Lines Provide Pathway for Solar Cell Current: New tomographic AFM imaging technique reveals that microstructural defects, generally thought to be detrimental, actually improve conductivity in cadmium telluride solar cells September 26th, 2016

Tattoo therapy could ease chronic disease: Rice-made nanoparticles tested at Baylor College of Medicine may help control autoimmune diseases September 23rd, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic