Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > III-V Compounds Emerging as Prime Materials for Future NMOS Channels, Technologists Indicate at SEMATECH & AIXTRON Workshop during IEDM

Abstract:
The high electron mobilities of selected III-V compounds make them prime candidates for future NMOS channel materials, with an indium-based gallium-arsenide (InGaAs) likely to be the material of choice, industry experts agreed during a SEMATECH-led workshop at the IEEE International Electron Devices Meeting (IEDM).

III-V Compounds Emerging as Prime Materials for Future NMOS Channels, Technologists Indicate at SEMATECH & AIXTRON Workshop during IEDM

Washington, DC | Posted on December 18th, 2007

The invitational meeting, sponsored by AIXTRON AG and organized by SEMATECH, attracted more than 60 industry and university scientists to presentations from ranking technologists. The proponents of III-V expressed considerable excitement over the manufacturability of materials based on previously underused elements in columns III-V of the periodic table. InGaAs, with a mobility performance of 6-10 times that of silicon (Si), emerged as a leading channel material for dual channel devices that may consist of germanium-based PMOS and III-V-based NMOS field-effect transistors (FETs.)

At the same time, several industry experts expressed concern that these materials-based solutions for performance enhancement could not be brought to manufacturing in time, and that many issues that need to be addressed to realize performance improvement would not be resolved in time for devices at 22nm and beyond .

Technologists also agreed that inserting III-V materials on Si devices poses several challenges, including lattice mismatch, poor interface quality, high-k dielectric growth and off-state current leakage. However, the scalability of metal-organic chemical vapor deposition (MOCVD) attracted a consensus as the most promising manufacturing process, with clustered chambers for III-V and high-k suggested as an effective tool configuration for increased throughput. Opening speaker Robert Chau of Intel urged researchers to collaborate on resolving these and other issues, adding: "By 2012, we should have a real working solution for III-V."

The workshop, entitled "III-V CMOS on Si: Technical and Manufacturing Needs," also included a welcome speech by Raj Jammy, director of SEMATECH's Front End Processes Division. The speakers' panel consisted of Devendra Sadana of IBM, Max Fischetti of the University of Massachusetts, Suman Datta of Penn State University, Gene Fitzgerald of MIT, Matthias Passlack of Freescale Semiconductor, Peter Ye of Purdue University, and Rainer Beccard of AIXTRON. The workshop was moderated by Rusty Harris and Prashant Majhi of SEMATECH and by Zia Karim from AIXTRON.

At the IEDM technical sessions that followed, SEMATECH engineers revealed potentially breakthrough approaches for enabling high-k-metal gates and advanced channel engineering options by the 32-22nm technology generations.

Five papers presented by SEMATECH's Front End Processes (FEP) Division capped a year of solid progress by the consortium's technologists in developing a manufacturable high-k metal gate-stack solution for advanced device generations. The papers detailed a highly successful use of flash annealing, a new gate stack material for scaling EOT down to 0.85 nm, and new possibilities for performance improvement through use of alternate orientation Si surfaces and strained SiGe and Ge channels.

One paper, "Impact of Flash Annealing on Performance and Reliability of High-k/Metal-Gate MOSFETs for sub-45nm CMOS" whose lead author is FEP'S Pankaj Kalra, marked the successful use of millisecond annealing on scaled high-k metal gated devices to form ultra°©shallow junctions that meet requirements for sub-45nmn CMOS technology.

In this process, the wafers were ramped up to an intermediate temperature followed by using flash lamps to heat the device side of the wafer to the peak anneal temperature of 1300°C.

Subsequent testing revealed that flash annealing, unlike spike annealing, minimizes the dopant diffusion that causes excessive junction depths, and actually improves dopant activation. Also, the process does not significantly affect bulk charge trapping, one of the major performance/reliability issues in high-k dielectrics. The flash process can achieve junction depths around 12-15nm with low effective sheet resistance, a feat that meets 32nm technology targets.

A paper by lead author Rusty Harris explored the effectiveness of high-k metal gates built on the 110 silicon crystal plane. High-k/metal gates on NMOS Si(110) demonstrate respectable output performance due to velocity saturation of electrons, the authors found. "High-k seems to be an important element in making the 110 channel very realistic," Harris noted during his presentation.

Also, it appears that off-state current can be controlled in Si(110) in the same way as the more conventional Si(100) orientation, allowing Si(110) NMOS and PMOS structures to be used effectively in low standby power (LTSP) devices. As a result, Si(110) may provide significant performance improvement for high-performance (HP) and LTSP devices without the process complexity typical of mixed-orientation CMOS approaches.

Sagar Suthram served as lead author of a paper that discussed silicon-germanium with strained quantum wells (QWs) which could offer a replacement for silicon channels for 22nm and beyond, meeting future low-power and high-performance requirements that are probably too great for silicon-based materials. These QW devices - which utilize the quantum well effect of confining charge carriers to a two-dimensional plane, improving their transport characteristics - exhibit low band-to-band tunneling current and provide significant mobility enhancements. The QW devices display strain response similar to that of Si, indicating that scaling pathways with Ge-based devices exist.

SEMATECH engineers also released important new details on enabling approaches for dual metal gate technology:

Enriching high-k materials with oxygen in a low-temperature process is an effective way to diminish flat-band roll-off (Vfb), which is the main challenge to achieving low PMOS threshold voltage (Vt) and thin equivalent oxide thickness (EOT) at the same time. In developing this solution, FEP engineers discovered that progressive oxygen vacancy generation causes Vfb roll-off, shedding light on a little°©understood phenomenon. S.C. Song is lead author of this paper.

A second generation higher-k gate stack material, hafnium-titanium-silicon-oxynitride (HfTiSiON), has been demonstrated as an effective successor to first generation HfSiON gate dielectric materials. With an aggressively scaled dielectric constant (k) of around 40, and low leakage, HfTiSiON appears to answer gate stack manufacturability needs for the 32nm generation and beyond. "For the first time, we addressed the thermodynamic instability of TiO2°©containing dielectrics," said lead author Prasanna Sivasubramani. "This may enable gate stack scaling beyond HfO2."

####

About SEMATECH®
For 20 years, SEMATECH® has set global direction, enabled flexible collaboration, and bridged strategic R&D to manufacturing. Today, we continue accelerating the next technology revolution with our nanoelectronics and emerging technology partners.

For more information, please click here

Contacts:
Dan McGowan

512-356-3440

Copyright © SEMATECH®

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

'Pixel' engineered electronics have growth potential: Rice, Oak Ridge, Vanderbilt, Penn scientists lead creation of atom-scale semiconducting composites September 29th, 2014

Future flexible electronics based on carbon nanotubes: Study in Applied Physics Letters show how to improve nanotube transistor and circuit performance with fluoropolymers September 23rd, 2014

Twisted graphene chills out: When two sheets of graphene are stacked in a special way, it is possible to cool down the graphene with a laser instead of heating it up, University of Manchester researchers have shown September 22nd, 2014

SouthWest NanoTechnologies (SWeNT) Receives NIST Small Business Innovation Research (SBIR) Phase 1 Award to Produce Greater than 99% Semiconducting Single-Wall Carbon Nanotubes September 19th, 2014

Announcements

Chemical interactions between silver nanoparticles and thiols: A comparison of mercaptohexanol again September 30th, 2014

A Heartbeat Away? Hybrid "Patch" Could Replace Transplants: TAU researcher harnesses gold nanoparticles to engineer novel biocompatible cardiac patch September 30th, 2014

Iranian Scientists Determine Grain Size, Minimize Time of Nanocomposite Synthesis September 29th, 2014

Nanoparticles Used to Improve Quality of Bone Cement September 29th, 2014

Interviews/Book Reviews/Essays/Reports/Podcasts/Journals

Chemical interactions between silver nanoparticles and thiols: A comparison of mercaptohexanol again September 30th, 2014

A Heartbeat Away? Hybrid "Patch" Could Replace Transplants: TAU researcher harnesses gold nanoparticles to engineer novel biocompatible cardiac patch September 30th, 2014

Iranian Scientists Determine Grain Size, Minimize Time of Nanocomposite Synthesis September 29th, 2014

Nanoparticles Used to Improve Quality of Bone Cement September 29th, 2014

Events/Classes

Oxford Instruments launches 3rd annual Indian nanotechnology seminars in Kolkata and Delhi - sharing expertise with Nanotechnology researchers in India September 25th, 2014

Grenoble Hosting SEMICON Europa Oct. 7-9, First Time Event Held in France: Leti’s 90-square-meter Booth Will Feature Portable Showroom To Demonstrate New Technology Innovations September 24th, 2014

Contributing to the spirit of the IYCR 2014 September 24th, 2014

BSA Distinguished Lecture Tuesday, 10/14: 'LCLS: A Stunning New View Through X-ray Laser Eyes' September 23rd, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE