Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Penn engineers design computer memory in nanoscale form that retrieves data 1,000 times faster

Abstract:
Scientists from the University of Pennsylvania have developed nanowires capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing portable memory devices such as Flash memory and micro-drives, all using less power and space than current memory technologies.

Penn engineers design computer memory in nanoscale form that retrieves data 1,000 times faster

Philadelphia, PA | Posted on September 17th, 2007

Ritesh Agarwal, an assistant professor in the Department of Materials Science and Engineering, and colleagues developed a self-assembling nanowire of germanium antimony telluride, a phase-changing material that switches between amorphous and crystalline structures, the key to read/write computer memory. Fabrication of the nanoscale devices, roughly 100 atoms in diameter, was performed without conventional lithography, the blunt, top-down manufacturing process that employs strong chemicals and often produces unusable materials with space, size and efficiency limitations.

Instead, researchers used self-assembly, a process by which chemical reactants crystallize at lower temperatures mediated by nanoscale metal catalysts to spontaneously form nanowires that were 30-50 nanometers in diameter and 10 micrometers in length, and then they fabricated memory devices on silicon substrates.

"We measured the resulting nanowires for write-current amplitude, switching speed between amorphous and crystalline phases, long-term durability and data retention time," Agarwal said.

Tests showed extremely low power consumption for data encoding (0.7mW per bit). They also indicated the data writing, erasing and retrieval (50 nanoseconds) to be 1,000 times faster than conventional Flash memory and indicated the device would not lose data even after approximately 100,000 years of use, all with the potential to realize terabit-level nonvolatile memory device density.

"This new form of memory has the potential to revolutionize the way we share information, transfer data and even download entertainment as consumers," Agarwal said. "This represents a potential sea-change in the way we access and store data."

Phase-change memory in general features faster read/write, better durability and simpler construction compared with other memory technologies such as Flash. The challenge has been to reduce the size of phase change materials by conventional lithographic techniques without damaging their useful properties. Self-assembled phase-change nanowires, as created by Penn researchers, operate with less power and are easier to scale, providing a useful new strategy for ideal memory that provides efficient and durable control of memory several orders of magnitude greater than current technologies.

"The atomic scale of the nanodevices may represent the ultimate size limit in current-induced phase transition systems for non-volatile memory applications," Agarwal said.

Current solid-state technology for products like memory cards, digital cameras and personal data assistants traditionally utilize Flash memory, a non-volatile and durable computer memory that can be erased and reprogrammed electronically. Data on Flash drives provides most battery-powered devices with acceptable levels of durability and moderately fast data access. Yet the technology's limits are apparent. Digital cameras can't snap rapid-fire photos because it takes precious seconds to store the last photo to memory. If the memory device is fast, as in DRAM and SRAM used in computers, then it is volatile; if the plug on a desktop computer is pulled, all recent data entry is lost.

Therefore, a universal memory device is desired that can be scalable, fast, durable and nonvolatile, a difficult set of requirements which have now been demonstrated at Penn.

"Imagine being able to store hundreds of high-resolution movies in a small drive, downloading them and playing them without wasting time on data buffering, or imagine booting your laptop computer in a few seconds as you wouldn't need to transfer the operating system to active memory" Agarwal said.

The research was performed by Agarwal, Se-Ho Lee and Yeonwoong Jung of the Department of Materials Science and Engineering in the School of Engineering and Applied Science at Penn. The findings appear online in the journal Nature Nanotechnology and in the October print edition.

The research was supported by the Materials Research Science and Engineering Center at Penn, the University of Pennsylvania Research Foundation award and a grant from the National Science Foundation.

####

About University of Pennsylvania
At the University of Pennsylvania, you'll find a historic, Ivy League school with highly selective admissions and a history of innovation in interdisciplinary education and scholarship. You'll also find a picturesque campus amidst a dynamic city and a world-class research institution.

For more information, please click here

Contacts:
Jordan Reese

215-573-6604

Copyright © University of Pennsylvania

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Promising Ferroelectric Materials Suffer From Unexpected Electric Polarizations: Brookhaven Lab scientists find surprising locked charge polarizations that impede performance in next-gen materials that could otherwise revolutionize data-driven devices August 18th, 2014

Can our computers continue to get smaller and more powerful? University of Michigan computer scientist reviews frontier technologies to determine fundamental limits of computer scaling August 13th, 2014

An Inkjet-Printed Field-Effect Transistor for Label-Free Biosensing August 11th, 2014

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability July 10th, 2014

Nanoelectronics

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

A*STAR and industry form S$200M semiconductor R&D July 25th, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

3-D nanostructure could benefit nanoelectronics, gas storage: Rice U. researchers predict functional advantages of 3-D boron nitride July 15th, 2014

Discoveries

Raman Whispering Gallery Detects Nanoparticles September 1st, 2014

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

Copper shines as flexible conductor August 29th, 2014

Announcements

Raman Whispering Gallery Detects Nanoparticles September 1st, 2014

Nanoscale assembly line August 29th, 2014

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

New Vice President Takes Helm at CNSE CMOST: Catherine Gilbert To Lead CNSE Children’s Museum of Science and Technology Through Expansion And Relocation August 29th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE