Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Researchers Improve Ability to Write and Store Information on Electronic Devices

Matthias Bode, Center for Nanoscale Materials, is shown with his enhanced spin polarized scanning tunneling microscope (SP-STM). His enhanced technique allows scientists to observe the magnetism of single atoms. Use of this method could lead to better magnetic storage devices for computers and other electronics.
Matthias Bode, Center for Nanoscale Materials, is shown with his enhanced spin polarized scanning tunneling microscope (SP-STM). His enhanced technique allows scientists to observe the magnetism of single atoms. Use of this method could lead to better magnetic storage devices for computers and other electronics.

Abstract:
New research led by the U.S. Department of Energy's Argonne National Laboratory physicist Matthias Bode provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic nanoparticle without any magnetic field and may enable computers to more accurately write and store information.

Researchers Improve Ability to Write and Store Information on Electronic Devices

Argonne, IL | Posted on September 14th, 2007

New research led by the U.S. Department of Energy's Argonne National Laboratory physicist Matthias Bode provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic nanoparticle without any magnetic field and may enable computers to more accurately write and store information.

Bode and four colleagues at the University of Hamburg used a special scanning tunneling microscope equipped with a magnetic probe tip to force a spin current through a small magnetic structure. The researchers were able to show that the structure's magnetization direction is not affected by a small current, but can be influenced if the spin current is sufficiently high.

Most computers today use dynamic random access memory, or DRAM, in which each piece of binary digital information, or bit, is stored in an individual capacitor in an integrated circuit. Bode's experiment focused on magneto-resistive random access memory, or MRAM, which stores data in magnetic storage elements consisting of two ferromagnetic layers separated by a thin non-magnetic spacer. While one of the two layers remains polarized in a constant direction, the other layer becomes polarized through the application of an external magnetic field either in the same direction as the top layer (for a "0") or in the opposite direction (for a "1").

Traditionally, MRAM are switched by magnetic fields. As the bit size has shrunk in each successive generation of computers in order to accommodate more memory in the same physical area, however, they have become more and more susceptible to "false writes" or "far-field" effects, Bode said. In this situation, the magnetic field may switch the magnetization not only of the target bit but of its neighbors as well. By using the tip of the Scanning Tunneling Microscope (STM), which has the potential to resolve structures down to a single atom, the scientists were able to eliminate that effect.

Bode and his colleagues were the first ones who did such work with an STM that generates high spatial-resolution data. "If you now push just a current through this bit, there's no current through the next structure over," Bode said. "This is a really local way of writing information."

The high resolution of the STM tip might enable scientists to look for small impurities in the magnetic storage structures and to investigate how they affect the magnet's polarization. This technique could lead to the discovery of a material or a method to make bit switching more efficient. "If you find that one impurity helps to switch the structure, you might be able to intentionally dope the magnet such that it switches at lower currents," Bode said.

Results of this research were published in the September 14 issue of Science and related research was published earlier this year in Nature.

Funding for this work was provided by Deutsche Forschungsgemeinschaft and the European Union project ASPRINT. This work was conducted prior to Bode's arrival at Argonne. His research at Argonne will be predominately funded by DOE's Office of Basic Energy Sciences.

####

About Argonne National Laboratory
With employees from more than 60 nations, Argonne National Laboratory brings the world's brightest scientists and engineers together to find exciting and creative new solutions to pressing national problems in science and technology. The nation's first national laboratory, Argonne conducts leading-edge basic and applied scientific research in virtually every scientific discipline. Argonne researchers work closely with researchers from hundreds of companies, universities, and federal, state and municipal agencies to help them solve their specific problems, advance America 's scientific leadership and prepare the nation for a better future. Argonne is managed by UChicago Argonne, LLC for the U.S. Department of Energy's Office of Science.

For more information, please click here

Contacts:
Sylvia Carson
630/252-5510

at Argonne

Copyright © Newswise

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Promising Ferroelectric Materials Suffer From Unexpected Electric Polarizations: Brookhaven Lab scientists find surprising locked charge polarizations that impede performance in next-gen materials that could otherwise revolutionize data-driven devices August 18th, 2014

Can our computers continue to get smaller and more powerful? University of Michigan computer scientist reviews frontier technologies to determine fundamental limits of computer scaling August 13th, 2014

An Inkjet-Printed Field-Effect Transistor for Label-Free Biosensing August 11th, 2014

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability July 10th, 2014

Discoveries

Tissue regeneration using anti-inflammatory nanomolecules August 22nd, 2014

A breakthrough in imaging gold nanoparticles to atomic resolution by electron microscopy August 22nd, 2014

Shaping the Future of Nanocrystals: Berkeley Lab Researchers Obtain First Direct Observation of Facet Formation in Nanocubes August 21st, 2014

Water window imaging opportunity: A new theoretical study elucidates mechanisms that could help in producing coherent radiations, ultimately promoting high-contrast imaging of biological samples August 21st, 2014

Announcements

Tissue regeneration using anti-inflammatory nanomolecules August 22nd, 2014

A breakthrough in imaging gold nanoparticles to atomic resolution by electron microscopy August 22nd, 2014

Malvern’s Dr Alan Rawle talks TLAs in plenary lecture at Particulate Systems Analysis conference August 21st, 2014

Water window imaging opportunity: A new theoretical study elucidates mechanisms that could help in producing coherent radiations, ultimately promoting high-contrast imaging of biological samples August 21st, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE