Home > Press > VESTA & ATDF Introduce Super High-k Films for DRAM and Flash Applications; Also Announce Innovative Low-Temperature Processing Technology
VESTA Technology, Inc., a leader in thermal process systems and atomic layer deposition, has joined with ATDF, the world's leading R&D foundry, to unveil Super High-k (Super-k) film, a new product suitable for semiconductor manufacturing in 200 mm and 300 mm wafer fabs. The companies also announced a novel technology that opens up new possibilities for low-temperature wafer processing.
VESTA & ATDF Introduce Super High-k Films for DRAM and Flash Applications; Also Announce Innovative Low-Temperature Processing Technology
SAN JOSE, CA & AUSTIN, TX | Posted on July 11th, 2007
Super-k films, designed for processing at nanotechnology scales, provide a dielectric constant (k) after post-deposition annealing (PDA) nearly double that of competing films based on hafnium oxide (HfO2) and zirconium oxide (ZrO2). In combination with VESTA's atomic-layer deposition (ALD) system, Super-k allows manufacturers to use existing DRAM capacitor designs at the 45 nm technology generation. Flash inter-polysilicon structures also can be extended to 45 nm by using Super-k in place of current oxide/silicon nitride/silicon oxide (ONO) films.
These results are enabled when Super-k is used in combination with VESTA's ALD system, which provides a high-k solution for capacitor and gate stack integrations. The VESTA system includes high-k chambers and a rapid annealing process chamber with remote plasma capability. Adding one or more VULCANTM metal chambers to the system provides a "cluster solution" for processes involving high-k dielectrics in combination with metal electrodes.
VESTA and ATDF collaborated for several months to develop Super-k, with VESTA providing the starting material and ATDF setting performance specifications and helping develop appropriate test methods.
In a separate development, VESTA and ATDF announced a non-damaging process that allows plasma-enhanced titanium nitride (TiN) films containing no carbon to be deposited at temperatures as much as 30 percent lower than conventional methods involving TiN deposition.
This finding opens a new era allowing 350°C processing to be used in making low-resistance electrodes and stable barrier metals. Low-temperature TiN technology could be especially useful in producing nickel-silicide (NiSi) integrated devices and high-k gate stacks, compared to thermal films deposited at 550-600°C using chemical-vapor deposition (CVD).
More information on Super-k and low-temperature TiN processing will be available at the ATDF exhibit (Booth 5516, Moscone Center North Hall) during SEMICON West, July 16-20 in San Francisco, CA.
About VESTA Technology, Inc.
VESTA, headquartered in San Jose, Calif. is a leading supplier of next generation thermal processing and deposition solutions to the global semiconductor and nano-technology industries. VESTA's R&D and Demo facilities are located in Austin, Texas. IPS Ltd., located in Pyungtaek, S. Korea is an exclusive partner and equipment provider to VESTA with an exclusive technology license and world-wide distributorship agreement.
ATDF, a wholly owned subsidiary of SEMATECH, is a leading technology R&D center where research meets manufacturing for semiconductor manufacturers, equipment and materials suppliers, and others. ATDF customers can confidentially test new designs, integration methodologies, and prototype systems while protecting their own intellectual property, and development partners can work closely with one another in a custom manufacturing environment. ATDF also develops baseline processes, accepted industry-wide, that bring new tools and materials to manufacturing faster, at lower cost. More information can be found at http://www.atdf.com .
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Chuck Kim, 408-519-5805
Dan McGowan, 512-356-3440
Copyright © Business Wire 2007
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