Home > News > Carbon nanotube transistors get faster
July 3rd, 2007
Carbon nanotube transistors get faster
A team of French researchers announced they have made transistors from carbon nanotubes on a silicon substrate.
Scientists explained that these transistors, commonly used as automatic switches, can reach cutoff frequencies of 30 GHz. The previous record, reported by the same team in August 2006, has now been improved by a factor of 4. New prospects are opened up for mainstream applications that require high operating frequencies.
New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014
Fonon Announces 3D Metal Sintering Technology: Emerging Additive Nano Powder Manufacturing Technology August 28th, 2014
RMIT delivers $30m boost to micro and nano-tech August 26th, 2014
Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014
New synthesis method may shape future of nanostructures, clean energy: Findings advance efficient solar spliting of water into hydrogen fuel September 2nd, 2014
Accounting for Biological Aggregation in Heating and Imaging of Magnetic Nanoparticles September 2nd, 2014
Engineers develop new sensor to detect tiny individual nanoparticles September 2nd, 2014
Future solar panels September 2nd, 2014