Home > News > Carbon nanotube transistors get faster
July 3rd, 2007
Carbon nanotube transistors get faster
Abstract:
A team of French researchers announced they have made transistors from carbon nanotubes on a silicon substrate.
Scientists explained that these transistors, commonly used as automatic switches, can reach cutoff frequencies of 30 GHz. The previous record, reported by the same team in August 2006, has now been improved by a factor of 4. New prospects are opened up for mainstream applications that require high operating frequencies.
Source:
eetimes.com
Bookmark:
| Related News Press |
Chip Technology
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
HKUST researchers develop new integration technique for efficient coupling of III-V and silicon February 16th, 2024
Announcements
NRL charters Navy’s quantum inertial navigation path to reduce drift April 5th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||