Home > News > Carbon nanotube transistors get faster
July 3rd, 2007
Carbon nanotube transistors get faster
A team of French researchers announced they have made transistors from carbon nanotubes on a silicon substrate.
Scientists explained that these transistors, commonly used as automatic switches, can reach cutoff frequencies of 30 GHz. The previous record, reported by the same team in August 2006, has now been improved by a factor of 4. New prospects are opened up for mainstream applications that require high operating frequencies.
Analysis of Electromagnetic Performance, Coupling of Couple Nanoholes March 10th, 2014
Two-dimensional material shows promise for optoelectronics: Team creates LEDs, photovoltaic cells, and light detectors using novel 1-molecule-thick material March 10th, 2014
Squeezing light into metals: University of Utah engineers control conductivity with inkjet printer March 7th, 2014
Optimum Stable Conditions Achieved for Growth of Semiconducting Nanostructures on Metals March 5th, 2014
Malvern specialist to explore use of Nanoparticle Tracking Analysis for characterizing extracellular vesicles at ISEV 2014 March 11th, 2014
Thailand's Next Move on Research and Innovation March 11th, 2014
Arrowhead to Present at Barclays Global Healthcare Conference March 11th, 2014
Scientists build thinnest-possible LEDs to be stronger, more energy efficient March 10th, 2014