Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Silicon nanowires upgrade data-storage technology

Abstract:
Scientists at the National Institute of Standards and Technology (NIST), along with colleagues at George Mason University and Kwangwoon University in Korea, have fabricated a memory device that combines silicon nanowires with a more traditional type of data-storage. Their hybrid structure may be more reliable than other nanowire-based memory devices recently built and more easily integrated into commercial applications.

Silicon nanowires upgrade data-storage technology

Gaithersburg, MD | Posted on June 9th, 2007

As reported in a recent paper,* the device is a type of "non-volatile" memory, meaning stored information is not lost when the device is without power. So-called "flash" memory (used in digital camera memory cards, USB memory sticks, etc.) is a well-known example of electronic non-volatile memory. In this new device, nanowires are integrated with a higher-end type of non-volatile memory that is similar to flash, a layered structure known as semiconductor-oxide-nitride-oxide-semiconductor (SONOS) technology. The nanowires are positioned using a hands-off self-alignment technique, which could allow the production cost—and therefore the overall cost—of large-scale viable devices to be lower than flash memory cards, which require more complicated fabrication methods.

The researchers grew the nanowires onto a layered oxide-nitride-oxide substrate. Applying a positive voltage across the wires causes electrons in the wires to tunnel down into the substrate, charging it. A negative voltage causes the electrons to tunnel back up into the wires. This process is the key to the device's memory function: when fully charged, each nanowire device stores a single bit of information, either a "0" or a "1" depending on the position of the electrons. When no voltage is present, the stored information can be read.

The device combines the excellent electronic properties of nanowires with established technology, and thus has several characteristics that make it very promising for applications in non-volatile memory. For example, it has simple read, write, and erase capabilities. It boasts a large memory window—the voltage range over which it stores information—which indicates good memory retention and a high resistance to disturbances from outside voltages. The device also has a large on/off current ratio, a property that allows the circuit to clearly distinguish between the "0" and "1" states.

Two advantages the NIST design may hold over alternative proposals for nanowire-based memory devices, the researchers say, are better stability at higher temperatures and easier integration into existing chip fabrication technology.

* Q. Li, X. Zhu, H. Xiong, S.-M. Koo, D.E. Ioannou, J. Kopanski, J.S. Suehle and C.A. Richter. Silicon nanowire on oxide/nitride/oxide for memory application. Nanotechnology 18 (2007) 235204.

####

About National Institute of Standards and Technology (NIST)
From automated teller machines and atomic clocks to mammograms and semiconductors, innumerable products and services rely in some way on technology, measurement, and standards provided by the National Institute of Standards and Technology.

Founded in 1901, NIST is a non-regulatory federal agency within the U.S. Commerce Department's Technology Administration. NIST's mission is to promote U.S. innovation and industrial competitiveness by advancing measurement science, standards, and technology in ways that enhance economic security and improve our quality of life.

For more information, please click here

Contacts:
National Institute of Standards and Technology (NIST)
Michael E. Newman

301-975-3025

Copyright © National Institute of Standards and Technology (NIST)

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

Fonon Announces 3D Metal Sintering Technology: Emerging Additive Nano Powder Manufacturing Technology August 28th, 2014

RMIT delivers $30m boost to micro and nano-tech August 26th, 2014

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

Memory Technology

Promising Ferroelectric Materials Suffer From Unexpected Electric Polarizations: Brookhaven Lab scientists find surprising locked charge polarizations that impede performance in next-gen materials that could otherwise revolutionize data-driven devices August 18th, 2014

Can our computers continue to get smaller and more powerful? University of Michigan computer scientist reviews frontier technologies to determine fundamental limits of computer scaling August 13th, 2014

An Inkjet-Printed Field-Effect Transistor for Label-Free Biosensing August 11th, 2014

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability July 10th, 2014

Nanoelectronics

Competition for Graphene: Berkeley Lab Researchers Demonstrate Ultrafast Charge Transfer in New Family of 2D Semiconductors August 26th, 2014

A*STAR and industry form S$200M semiconductor R&D July 25th, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

3-D nanostructure could benefit nanoelectronics, gas storage: Rice U. researchers predict functional advantages of 3-D boron nitride July 15th, 2014

Discoveries

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

Copper shines as flexible conductor August 29th, 2014

Novel 'butterfly' molecule could build new sensors, photoenergy conversion devices August 28th, 2014

Announcements

A new, tunable device for spintronics: An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs August 29th, 2014

Nanoscale assembly line August 29th, 2014

New analytical technology reveals 'nanomechanical' surface traits August 29th, 2014

New Vice President Takes Helm at CNSE CMOST: Catherine Gilbert To Lead CNSE Children’s Museum of Science and Technology Through Expansion And Relocation August 29th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE