Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Silicon nanowires upgrade data-storage technology

Abstract:
Scientists at the National Institute of Standards and Technology (NIST), along with colleagues at George Mason University and Kwangwoon University in Korea, have fabricated a memory device that combines silicon nanowires with a more traditional type of data-storage. Their hybrid structure may be more reliable than other nanowire-based memory devices recently built and more easily integrated into commercial applications.

Silicon nanowires upgrade data-storage technology

Gaithersburg, MD | Posted on June 9th, 2007

As reported in a recent paper,* the device is a type of "non-volatile" memory, meaning stored information is not lost when the device is without power. So-called "flash" memory (used in digital camera memory cards, USB memory sticks, etc.) is a well-known example of electronic non-volatile memory. In this new device, nanowires are integrated with a higher-end type of non-volatile memory that is similar to flash, a layered structure known as semiconductor-oxide-nitride-oxide-semiconductor (SONOS) technology. The nanowires are positioned using a hands-off self-alignment technique, which could allow the production cost—and therefore the overall cost—of large-scale viable devices to be lower than flash memory cards, which require more complicated fabrication methods.

The researchers grew the nanowires onto a layered oxide-nitride-oxide substrate. Applying a positive voltage across the wires causes electrons in the wires to tunnel down into the substrate, charging it. A negative voltage causes the electrons to tunnel back up into the wires. This process is the key to the device's memory function: when fully charged, each nanowire device stores a single bit of information, either a "0" or a "1" depending on the position of the electrons. When no voltage is present, the stored information can be read.

The device combines the excellent electronic properties of nanowires with established technology, and thus has several characteristics that make it very promising for applications in non-volatile memory. For example, it has simple read, write, and erase capabilities. It boasts a large memory window—the voltage range over which it stores information—which indicates good memory retention and a high resistance to disturbances from outside voltages. The device also has a large on/off current ratio, a property that allows the circuit to clearly distinguish between the "0" and "1" states.

Two advantages the NIST design may hold over alternative proposals for nanowire-based memory devices, the researchers say, are better stability at higher temperatures and easier integration into existing chip fabrication technology.

* Q. Li, X. Zhu, H. Xiong, S.-M. Koo, D.E. Ioannou, J. Kopanski, J.S. Suehle and C.A. Richter. Silicon nanowire on oxide/nitride/oxide for memory application. Nanotechnology 18 (2007) 235204.

####

About National Institute of Standards and Technology (NIST)
From automated teller machines and atomic clocks to mammograms and semiconductors, innumerable products and services rely in some way on technology, measurement, and standards provided by the National Institute of Standards and Technology.

Founded in 1901, NIST is a non-regulatory federal agency within the U.S. Commerce Department's Technology Administration. NIST's mission is to promote U.S. innovation and industrial competitiveness by advancing measurement science, standards, and technology in ways that enhance economic security and improve our quality of life.

For more information, please click here

Contacts:
National Institute of Standards and Technology (NIST)
Michael E. Newman

301-975-3025

Copyright © National Institute of Standards and Technology (NIST)

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Error-free into the quantum computer age December 15th, 2017

Columbia engineers create artificial graphene in a nanofabricated semiconductor structure: Researchers are the first to observe the electronic structure of graphene in an engineered semiconductor; finding could lead to progress in advanced optoelectronics and data processing December 13th, 2017

UCLA chemists synthesize narrow ribbons of graphene using only light and heat: Tiny structures could be next-generation solution for smaller electronic devices December 8th, 2017

Device makes power conversion more efficient: New design could dramatically cut energy waste in electric vehicles, data centers, and the power grid December 8th, 2017

Memory Technology

Quantum memory with record-breaking capacity based on laser-cooled atoms December 15th, 2017

Leti Breakthroughs Point Way to Significant Improvements in SoC Memories December 6th, 2017

Scientists make transparent materials absorb light December 1st, 2017

A material with promising properties: Konstanz scientist synthesizes an important ferromagnetic semiconductor November 25th, 2017

Nanoelectronics

Columbia engineers create artificial graphene in a nanofabricated semiconductor structure: Researchers are the first to observe the electronic structure of graphene in an engineered semiconductor; finding could lead to progress in advanced optoelectronics and data processing December 13th, 2017

GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card November 14th, 2017

Leti Will Present 11 Papers and Host More-than-Moore Technologies Workshop November 14th, 2017

The next generation of power electronics? Gallium nitride doped with beryllium: How to cut down energy loss in power electronics? The right kind of doping November 9th, 2017

Discoveries

Quantum memory with record-breaking capacity based on laser-cooled atoms December 15th, 2017

Record high photoconductivity for new metal-organic framework material December 15th, 2017

Error-free into the quantum computer age December 15th, 2017

Synthetic protein packages its own genetic material and evolves computationally designed protein assemblies are advancing research in synthetic life and in targeted drug delivery December 15th, 2017

Announcements

Quantum memory with record-breaking capacity based on laser-cooled atoms December 15th, 2017

Record high photoconductivity for new metal-organic framework material December 15th, 2017

Error-free into the quantum computer age December 15th, 2017

Leti Will Demonstrate First 3D Anti-Crash Solution for Embedding in Drones: Fitted on a Mass-Market Microcontroller, 360Fusion Software Technology Detects any Dynamic Obstacle and Helps Guide Drones Away from Collisions December 15th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project