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Home > News > IMEC Touts High-Performance Ge pMOS

December 12th, 2006

IMEC Touts High-Performance Ge pMOS

Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE International Electron Devices Meeting being held in San Francisco this week.


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