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SMI announces patent application for MOCVD of Chalcogenide films

Posted on August 15, 2006

Structured Materials Industries, Inc. (SMI) reports that it has filed a provisional patent for the MOCVD of GeSbTe based Chalcogenides as used in Chalcogenide Random Access Memories (CRAMs). CRAMs are a very promising non-volatile memory material for high speed high density memories. CRAMs are also inherently radiation tolerant, making them appropriate for use in military and space memory applications.

SMI has been working on MOCVD of chalcogenides for the past two years with federal, commercial and internal support. "Successfully depositing chalcogenide films by MOCVD initially proved to be very challenging; however once the process dynamics were resolved a straightforward deposition was achieved," said project scientist Dr. Edwin Dons.

"The successful MOCVD of chalcogenides opens the door to implementing improved manufacturing processes and the potential to more rapidly implement CRAM production and the ability to more rapidly explore alloying and doping enhancements to the material," said company president Dr. Gary S. Tompa.

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About Structured Materials Industries:
Structured Materials Industries, Incorporated is focused on being the leader in Metal Organic Chemical Vapor Deposition (MOCVD) and related technologies. SMI offers for sale: systems, components, materials, and process development services. SMI has an in-house applications laboratory featuring multi-reactor deposition systems and analytic capabilities, has developed a range of strategic partnerships to develop and implement MOCVD technology and looks forward to continuing to grow and expand upon mutually advantageous relationships.

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For General and Technical Information this release contact jyao@structuredmaterials.com

Contact:
Dr. Gary S. Tompa
gstompa@structuredmaterials.com
Structured Materials Industries, Inc.
Unit 102/103, 201 Circle Drive N.
Piscataway, New Jersey 08854
Phone: 732.302.9274
Fax: 732.302.9275

Copyright © Structured Materials Industries

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