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Home > News > Magnetoresitive effect could boost storage density

August 10th, 2006

Magnetoresitive effect could boost storage density

Abstract:
A team of researchers from Hitachi Cambridge Laboratory, the Czech Institute of Physics, the Universities of Cambridge and Nottingham have demonstrated a novel effect, called coulomb blockade anisotropic magnetoresistance (CBAMR).

Source:
electronicstalk.com

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