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SMI awarded Phase I SBIR to develop space qualified memory
Posted on February 16, 2006
Structured Materials Industries, Inc. (SMI) has been awarded a Phase I SBIR by the Air Force to develop space qualified nonvolatile memory leveraging a commercial fabrication technology. SMI will demonstrate an EEPROM memory array scalable to 16 -≠ 32M using SMIís ferroelectric cell technology. The ferroelectric performance is orders of magnitude faster than standard silicon tunneling memories and operates without charge pumps at existing supply voltages, which is extremely attractive for use in standard silicon architectures.
Integration will be performed on a standard commercial silicon fabrication line at 0.18um line width geometry and is the first step in producing hardened nonvolatile memory for aerospace applications of large density arrays. SMIís EEPROM design is in collaboration with expert designers using established hardened by design (HBD) techniques for maximum resistance to adverse effects of radiation. In future, products produced at the 0.90nm technology node will be manufactured within commercial foundry facilities and directly compete in the stand-alone and embedded memory markets.
This effort has broken the barrier to establishing a state-of-the-art manufacturing and design for advanced radiation hardened nonvolatile memory and will be applicable to both aerospace and commercial end users desiring high-speed low power nonvolatile memory.
About Structured Materials Industries:
Structured Materials Industries, Incorporated is focused on being the leader in Metal Organic Chemical Vapor Deposition (MOCVD) and related technologies. SMI offers for sale: systems, components, materials, and process development services. SMI has an in-house applications laboratory featuring multi-reactor deposition systems and analytic capabilities, has developed a range of strategic partnerships to develop and implement MOCVD technology and looks forward to continuing to grow and expand upon mutually advantageous relationships.
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