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Home > News > Making the most of doping

October 20th, 2005

Making the most of doping

Abstract:
The performance of semiconductor devices can be improved by controlling the position of dopants within them according to scientists in Japan. Takahiro Shinada and colleagues at Waseda University in Tokyo were able to reduce the threshold voltage for transistors by implanting dopant ions one by one to form arrays. The technique could also prove useful in efforts to build a silicon-based quantum computer.

Source:
nanotechweb

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