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October 3rd, 2005
NVE Corporation announced today that it has been awarded additional funding by the U.S. Navy's Office of Naval Research (ONR) to continue the development of deep sub-micron Vertical Transport Magnetoresistive Random Access Memory (VMRAM).
(Ed.'s note: further into the article you will read "MRAM is a revolutionary memory fabricated with nanotechnology that uses electron spin to store data." - saying that "MRAM is a revolutionary memory fabricated with nanotechnology" is misleading and confusing. A better wording might be "MRAM is a revolutionary memory fabricated using nanoscale technology."
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