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Home > News > TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

August 22nd, 2005

TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

Abstract:
"This result is an important step towards HVPE technology for InN-containing materials and devices including high brightness blue, ultra violet, and white light emitting diodes (LEDs). TDI has already demonstrated GaN-based devices by proprietary patented HVPE technology. New process allows us to deposit InN epitaxial layers or 3-dimentional nano-size structures in a controllable manner."

Source:
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