Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

August 22nd, 2005

TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures

Abstract:
"This result is an important step towards HVPE technology for InN-containing materials and devices including high brightness blue, ultra violet, and white light emitting diodes (LEDs). TDI has already demonstrated GaN-based devices by proprietary patented HVPE technology. New process allows us to deposit InN epitaxial layers or 3-dimentional nano-size structures in a controllable manner."

Source:
marketwire

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Materials/Metamaterials

Chemical cages: New technique advances synthetic biology February 10th, 2016

Superconductivity: Footballs with no resistance - Indications of light-induced lossless electricity transmission in fullerenes contribute to the search for superconducting materials for practical applications February 9th, 2016

Making sense of metallic glass February 9th, 2016

Graphene decharging and molecular shielding February 8th, 2016

Announcements

Composite Pipe Long Term Testing Facility February 10th, 2016

Scientists take nanoparticle snapshots February 10th, 2016

Chemical cages: New technique advances synthetic biology February 10th, 2016

New thin film transistor may lead to flexible devices: Researchers engineer an electronics first, opening door to flexible electronics February 10th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic