Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > New Design Developed for Silicon Nanowire Transistors

Abstract:
Transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively

New Design Developed for Silicon Nanowire Transistors

July 01, 2005

In an advance for nanoscale electronics, researchers at the National Institute of Standards and Technology (NIST) have demonstrated a new design for silicon nanowire transistors that both simplifies processing and allows the devices to be switched on and off more easily.

The NIST design, described in a paper published June 29 by the journal Nanotechnology,* uses a simplified type of contact between the nanowire channel and the positive and negative electrodes of the transistor. The design allows more electrical current to flow in and out of the silicon. The researchers believe the design is the first to demonstrate a "Schottky barrier" type contact for a nanowire transistor built using a "top-down" approach. This barrier, an easily formed metal contact that electrons can tunnel through, requires much less doping with impurities than do conventional ohmic contacts, thereby simplifying processing requirements. Schottky contacts also offer more resistance and restrict electrical flow to one direction when the transistor is off.

In the NIST transistor design, the 60-nanometer-wide channels exhibit a much greater difference in current between the on and off states than is true for larger reference channels up to 5 micrometers wide. This suggests that when a channel is scaled down to the nano regime, the ultra-narrow proportions significantly reduce the current leakage associated with defects in silicon. As a result, the transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively, according to the paper's lead author, Sang-Mo Koo, a NIST guest researcher.

Silicon nanowire devices have received considerable attention recently for possible use in integrated nanoscale electronics as well as for studying fundamental properties of structures and devices with very small dimensions. The NIST work overcomes some key difficulties in making reliable devices or test structures at nanoscale dimensions. The results also suggest that nanowire transistors made with conventional lithographic fabrication methods can improve performance in nanoscale electronics, while allowing industry to retain its existing silicon technology infrastructure.

*S.M. Koo, M.D. Edelstein, Q.Li, C.A. Richter and E.M. Vogel. 2005. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors. Nanotechnology 16. Posted online June 29.


####
Media Contact:
Laura Ost
laura.ost@nist.gov
(301) 975-4034

Copyright NIST

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Possible Futures

Searching for errors in the quantum world September 21st, 2018

Viral RNA sensing: Optical detection of picomolar concentrations of RNA using switches in plasmonic chirality September 21st, 2018

UT engineers develop first method for controlling nanomotors: Breakthrough for nanotechnology as UT engineers develop first method for switching the mechanical motion of nanomotors September 21st, 2018

Leti Announces EU Project to Develop Powerful, Inexpensive Sensors with Photonic Integrated Circuits: REDFINCH Members Initially Targeting Applications for Gas Detection and Analysis For Refineries & Petrochemical Industry and Protein Analysis for Dairy Industry September 19th, 2018

Chip Technology

Researchers managed to prevent the disappearing of quantum information September 14th, 2018

New devices based on rust could reduce excess heat in computers: Physicists explore long-distance information transmission in antiferromagnetic iron oxide September 14th, 2018

New photonic chip promises more robust quantum computers September 14th, 2018

How a tetrahedral substance can be more symmetrical than a spherical atom: A new type of symmetry September 14th, 2018

Announcements

Searching for errors in the quantum world September 21st, 2018

Viral RNA sensing: Optical detection of picomolar concentrations of RNA using switches in plasmonic chirality September 21st, 2018

UT engineers develop first method for controlling nanomotors: Breakthrough for nanotechnology as UT engineers develop first method for switching the mechanical motion of nanomotors September 21st, 2018

Nanobiotix: Update on Head and Neck Phase I/II Trial with NBTXR3 and Other program data presented at ImmunoRad 2018 September 20th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project