Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > New Design Developed for Silicon Nanowire Transistors

Abstract:
Transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively

New Design Developed for Silicon Nanowire Transistors

July 01, 2005

In an advance for nanoscale electronics, researchers at the National Institute of Standards and Technology (NIST) have demonstrated a new design for silicon nanowire transistors that both simplifies processing and allows the devices to be switched on and off more easily.

The NIST design, described in a paper published June 29 by the journal Nanotechnology,* uses a simplified type of contact between the nanowire channel and the positive and negative electrodes of the transistor. The design allows more electrical current to flow in and out of the silicon. The researchers believe the design is the first to demonstrate a "Schottky barrier" type contact for a nanowire transistor built using a "top-down" approach. This barrier, an easily formed metal contact that electrons can tunnel through, requires much less doping with impurities than do conventional ohmic contacts, thereby simplifying processing requirements. Schottky contacts also offer more resistance and restrict electrical flow to one direction when the transistor is off.

In the NIST transistor design, the 60-nanometer-wide channels exhibit a much greater difference in current between the on and off states than is true for larger reference channels up to 5 micrometers wide. This suggests that when a channel is scaled down to the nano regime, the ultra-narrow proportions significantly reduce the current leakage associated with defects in silicon. As a result, the transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively, according to the paper's lead author, Sang-Mo Koo, a NIST guest researcher.

Silicon nanowire devices have received considerable attention recently for possible use in integrated nanoscale electronics as well as for studying fundamental properties of structures and devices with very small dimensions. The NIST work overcomes some key difficulties in making reliable devices or test structures at nanoscale dimensions. The results also suggest that nanowire transistors made with conventional lithographic fabrication methods can improve performance in nanoscale electronics, while allowing industry to retain its existing silicon technology infrastructure.

*S.M. Koo, M.D. Edelstein, Q.Li, C.A. Richter and E.M. Vogel. 2005. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors. Nanotechnology 16. Posted online June 29.


####
Media Contact:
Laura Ost
laura.ost@nist.gov
(301) 975-4034

Copyright NIST

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Possible Futures

Animal study shows flexible, dissolvable silicon device promising for brain monitoring: Other applications include post-operative observation for vascular, cardiac, and orthopaedic procedures, finds Penn study May 5th, 2016

Speedy ion conduction in solid electrolytes clears road for advanced energy devices May 5th, 2016

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Clues on the path to a new lithium battery technology: Charging produces highly reactive singlet oxygen in lithium air batteries May 5th, 2016

Chip Technology

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Molybdenum disulfide holds promise for light absorption: Rice researchers probe light-capturing properties of atomically thin MoS2 May 5th, 2016

A compact, efficient single photon source that operates at ambient temperatures on a chip: Highly directional single photon source concept is expected to lead to a significant progress in producing compact, cheap, and efficient sources of quantum information bits for future appls May 3rd, 2016

Spintronics for future information technologies: Spin currents in topological insulators controlled May 2nd, 2016

Announcements

Speedy ion conduction in solid electrolytes clears road for advanced energy devices May 5th, 2016

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Clues on the path to a new lithium battery technology: Charging produces highly reactive singlet oxygen in lithium air batteries May 5th, 2016

Unique nano-capsules promise the targeted drug delivery: Russian scientists created unique nano-capsules for the targeted drug delivery May 5th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic