Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > New Design Developed for Silicon Nanowire Transistors

Abstract:
Transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively

New Design Developed for Silicon Nanowire Transistors

July 01, 2005

In an advance for nanoscale electronics, researchers at the National Institute of Standards and Technology (NIST) have demonstrated a new design for silicon nanowire transistors that both simplifies processing and allows the devices to be switched on and off more easily.

The NIST design, described in a paper published June 29 by the journal Nanotechnology,* uses a simplified type of contact between the nanowire channel and the positive and negative electrodes of the transistor. The design allows more electrical current to flow in and out of the silicon. The researchers believe the design is the first to demonstrate a "Schottky barrier" type contact for a nanowire transistor built using a "top-down" approach. This barrier, an easily formed metal contact that electrons can tunnel through, requires much less doping with impurities than do conventional ohmic contacts, thereby simplifying processing requirements. Schottky contacts also offer more resistance and restrict electrical flow to one direction when the transistor is off.

In the NIST transistor design, the 60-nanometer-wide channels exhibit a much greater difference in current between the on and off states than is true for larger reference channels up to 5 micrometers wide. This suggests that when a channel is scaled down to the nano regime, the ultra-narrow proportions significantly reduce the current leakage associated with defects in silicon. As a result, the transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively, according to the paper's lead author, Sang-Mo Koo, a NIST guest researcher.

Silicon nanowire devices have received considerable attention recently for possible use in integrated nanoscale electronics as well as for studying fundamental properties of structures and devices with very small dimensions. The NIST work overcomes some key difficulties in making reliable devices or test structures at nanoscale dimensions. The results also suggest that nanowire transistors made with conventional lithographic fabrication methods can improve performance in nanoscale electronics, while allowing industry to retain its existing silicon technology infrastructure.

*S.M. Koo, M.D. Edelstein, Q.Li, C.A. Richter and E.M. Vogel. 2005. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors. Nanotechnology 16. Posted online June 29.


####
Media Contact:
Laura Ost
laura.ost@nist.gov
(301) 975-4034

Copyright © NIST

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Possible Futures

Air Force’s 30-year plan seeks 'strategic agility' August 1st, 2014

IBM Announces $3 Billion Research Initiative to Tackle Chip Grand Challenges for Cloud and Big Data Systems: Scientists and engineers to push limits of silicon technology to 7 nanometers and below and create post-silicon future July 10th, 2014

Virus structure inspires novel understanding of onion-like carbon nanoparticles April 10th, 2014

Local girl does good March 22nd, 2014

Chip Technology

‘Small’ transformation yields big changes September 16th, 2014

UT Arlington research uses nanotechnology to help cool electrons with no external sources September 11th, 2014

Excitonic Dark States Shed Light on TMDC Atomic Layers: Berkeley Lab Discovery Holds Promise for Nanoelectronic and Photonic Applications September 11th, 2014

Researchers Create World’s Largest DNA Origami September 11th, 2014

Announcements

New non-invasive technique could revolutionize the imaging of metastatic cancer September 17th, 2014

Toward making lithium-sulfur batteries a commercial reality for a bigger energy punch September 17th, 2014

Nanoscience makes your wine better September 17th, 2014

Effective Nanotechnology Innovations to Receive Mustafa Prize September 16th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE