Home > Press > New Design Developed for Silicon Nanowire Transistors
Transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively
New Design Developed for Silicon Nanowire Transistors
July 01, 2005
In an advance for nanoscale electronics, researchers at the National Institute of Standards and Technology (NIST) have demonstrated a new design for silicon nanowire transistors that both simplifies processing and allows the devices to be switched on and off more easily.
The NIST design, described in a paper published June 29 by the journal Nanotechnology,* uses a simplified type of contact between the nanowire channel and the positive and negative electrodes of the transistor. The design allows more electrical current to flow in and out of the silicon. The researchers believe the design is the first to demonstrate a "Schottky barrier" type contact for a nanowire transistor built using a "top-down" approach. This barrier, an easily formed metal contact that electrons can tunnel through, requires much less doping with impurities than do conventional ohmic contacts, thereby simplifying processing requirements. Schottky contacts also offer more resistance and restrict electrical flow to one direction when the transistor is off.
In the NIST transistor design, the 60-nanometer-wide channels exhibit a much greater difference in current between the on and off states than is true for larger reference channels up to 5 micrometers wide. This suggests that when a channel is scaled down to the nano regime, the ultra-narrow proportions significantly reduce the current leakage associated with defects in silicon. As a result, the transistors are less sensitive to electronic "noise" in the channel and can be turned on and off more effectively, according to the paper's lead author, Sang-Mo Koo, a NIST guest researcher.
Silicon nanowire devices have received considerable attention recently for possible use in integrated nanoscale electronics as well as for studying fundamental properties of structures and devices with very small dimensions. The NIST work overcomes some key difficulties in making reliable devices or test structures at nanoscale dimensions. The results also suggest that nanowire transistors made with conventional lithographic fabrication methods can improve performance in nanoscale electronics, while allowing industry to retain its existing silicon technology infrastructure.
*S.M. Koo, M.D. Edelstein, Q.Li, C.A. Richter and E.M. Vogel. 2005. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors. Nanotechnology 16. Posted online June 29.
Copyright © NIST
If you have a comment, please Contact
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
IBM Announces $3 Billion Research Initiative to Tackle Chip Grand Challenges for Cloud and Big Data Systems: Scientists and engineers to push limits of silicon technology to 7 nanometers and below and create post-silicon future July 10th, 2014
Virus structure inspires novel understanding of onion-like carbon nanoparticles April 10th, 2014
Local girl does good March 22nd, 2014
Surface Characteristics Influence Cellular Growth on Semiconductor Material March 12th, 2014
Dongbu HiTek Unveils Low-Voltage BCDMOS Process for Efficient Power Management in Smart Phones and Tablet Computers July 21st, 2014
Oregon chemists eye improved thin films with metal substitution: Solution-based inorganic process could drive more efficient electronics and solar devices July 21st, 2014
Carbyne morphs when stretched: Rice University calculations show carbon-atom chain would go metal to semiconductor July 21st, 2014
Martini Tech Inc. becomes the exclusive distributor for Yoshioka Seiko Co. porous chucks for Europe and North America July 20th, 2014
Oxford Instruments Asylum Research Opens an Atomic Force Microscopy Demonstration Lab in Mumbai, India July 21st, 2014
Steam from the sun: New spongelike structure converts solar energy into steam July 21st, 2014
More than glitter: Scientists explain how gold nanoparticles easily penetrate cells, making them useful for delivering drugs July 21st, 2014
Iran to Host 1st Asian Congress on Nanostructures on Kish Island July 21st, 2014