Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > SRAMs readied for 45-nm node

February 11th, 2005

SRAMs readied for 45-nm node

Abstract:
Designers from IBM, Samsung, Texas Instruments and Virage Logic laid out design, test and process issues affecting SRAMs in sub-90-nm devices during a panel session. The next threshold is the 65-nm process node, and challenges increase substantially at the 45-nm process node.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Advances in molecular electronics: Lights on -- molecule on: Researchers from Dresden and Konstanz succeed in light-controlled molecule switching April 20th, 2015

Yale-NUS, NUS and UT Austin researchers establish theoretical framework for graphene physics: Making strides towards using graphene to create new electronic devices April 20th, 2015

Nanotubes with two walls have singular qualities: Rice University lab calculates unique electronic qualities of double-walled carbon nanotubes April 16th, 2015

Graphenea embarks on a new era April 16th, 2015

Nanoelectronics

‘Oxford Instruments Young Nanoscientist India Award 2015’ to Prof. Arindam Ghosh April 20th, 2015

Advances in molecular electronics: Lights on -- molecule on: Researchers from Dresden and Konstanz succeed in light-controlled molecule switching April 20th, 2015

Nanotubes with two walls have singular qualities: Rice University lab calculates unique electronic qualities of double-walled carbon nanotubes April 16th, 2015

Solution-grown nanowires make the best lasers April 14th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project