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Home > News > SRAMs readied for 45-nm node

February 11th, 2005

SRAMs readied for 45-nm node

Abstract:
Designers from IBM, Samsung, Texas Instruments and Virage Logic laid out design, test and process issues affecting SRAMs in sub-90-nm devices during a panel session. The next threshold is the 65-nm process node, and challenges increase substantially at the 45-nm process node.

Source:
EETimes

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