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February 10th, 2005
The results of a two-year joint research programme by Intel Corporation and QinetiQ into new transistor technology that could become a promising candidate for making microprocessors in the middle of the next decade was made public today.
Researchers from the two companies have successfully built 'quantum well' transistors by integrating a new transistor material, pioneered by QinetiQ called indium antimonide (InSb). Transistors made of this material enable research devices to operate at very low voltages, while still rapidly switching and consuming little power. The research results obtained from the quantum well transistors research showed a 10x lower power consumption for the same performance, or conversely a 3x improvement in transistor performance for the same power consumption, as compared to today's traditional transistors.
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