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Home > News > IBM to discuss SRAM cell for the 32-nm generation

December 14th, 2004

IBM to discuss SRAM cell for the 32-nm generation

Abstract:
Even as researchers investigate alternatives, silicon scaling is alive and kicking. IBM Corp. researchers will go to this week's IEDM with a presentation detailing an SRAM cell that meets the specifications of the 32-nanometer node, with a cell area of 0.143 square micron.

Source:
EETimes

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