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Home > News > Nanomechanical memories take off

October 28th, 2004

Nanomechanical memories take off

Abstract:
Physicists in the US have made the first high-speed nanomechanical memory element from single-crystal silicon wafers. The device, developed by Pritiraj Mohanty and colleagues at Boston University, consists of a vibrating beam that can be made to switch between two distinct states. The team says its memory element could rival the current state-of-the-art in electronic data storage and processing.

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