Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Samsung begins making DRAMs on 90nm process

September 13th, 2004

Samsung begins making DRAMs on 90nm process

Abstract:
South Korean electronics giant Samsung Electronics Co. Ltd has started mass producing 512Mbit double data rate synchronous DRAMs using a 90nm manufacturing process and 300mm diameter wafers.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Magnetic atoms arranged in neat rows: FAU physicists enable one-dimensional atom chains to grow August 5th, 2016

New metamaterials can change properties with a flick of a light-switch: Material can lead to new optical devices August 3rd, 2016

Making magnets flip like cats at room temperature: Heusler alloy NiMnSb could prove valuable as a new material for digital information processing and storage July 25th, 2016

Research team led by NUS scientists develop plastic flexible magnetic memory device: Novel technique to implant high-performance magnetic memory chip on a flexible plastic surface without compromising performance July 21st, 2016

Announcements

A nanoscale wireless communication system via plasmonic antennas: Greater control affords 'in-plane' transmission of waves at or near visible light August 27th, 2016

Forces of nature: Interview with microscopy innovators Gerd Binnig and Christoph Gerber August 26th, 2016

A promising route to the scalable production of highly crystalline graphene films August 26th, 2016

Graphene under pressure August 26th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic