Home > News > Samsung mulls new 300-mm fab for 65-nm chips
August 26th, 2004
Samsung mulls new 300-mm fab for 65-nm chips
Abstract:
Continuing to expand its capacity, Korea's Samsung Electronics Co. Ltd. Wednesday (August 25) disclosed plans that it is looking to build a new wafer fab for use in processing devices at the 65-nm node. The proposed fab would be a 300-mm facility, which would make NAND-based flash memories and other 65-nm products. The company is already developing its first sub-70-nm parts, including an 8-gigabit flash-memory device for advanced NAND applications.
Source:
EETimes
Bookmark:
| Related News Press |
Chip Technology
MIPT scientists revisit optical constants of ultrathin gold films October 20th, 2017
Bringing the atomic world into full color: Researchers turn atomic force microscope measurements into color images October 19th, 2017
Spin current detection in quantum materials unlocks potential for alternative electronics October 15th, 2017
Memory Technology
Injecting electrons jolts 2-D structure into new atomic pattern: Berkeley Lab study is first to show potential of energy-efficient next-gen electronic memory October 13th, 2017
High-speed quantum memory for photons September 9th, 2017
Fast magnetic writing of data September 7th, 2017
Announcements
Creation of coherent states in molecules by incoherent electrons October 21st, 2017
Strange but true: turning a material upside down can sometimes make it softer October 20th, 2017
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
University Technology Transfer & Patents
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||