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Home > News > NVE Granted Patent on MRAM Innovation

June 21st, 2004

NVE Granted Patent on MRAM Innovation

Abstract:
NVE Corporation announced that the U.S. Patent and Trademark Office issued the company a patent for an innovative type of MRAM. Patent number 6,744,086, entitled "Current Switched Magnetoresistive Memory Cell," was granted in June and concerns spin-momentum magnetic memory cells. The patent also relates to thermally-assisted spin-momentum writing.

Source:
Businesswire

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