Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > Samsung to double flash capacity, debuts 90-nm NAND

April 1st, 2004

Samsung to double flash capacity, debuts 90-nm NAND

Abstract:
Looking to extend its lead in flash memory, South Korea's Samsung Electronics Co. Ltd. plans to double its flash capacity and has begun shipping its first NAND part based on a new 90-nm process technology. On the product front, Samsung has begun shipping a 2-gigabit NAND device, built around the 90-nm process, said Tom Quinn, vice president of memory sales and marketing for the company's U.S unit, Samsung Semiconductor Inc., based in San Jose.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

New materials for more powerful solar cells: Major breakthrough in solar energy November 11th, 2014

Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014

Superconducting circuits, simplified: New circuit design could unlock the power of experimental superconducting computer chips October 18th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More












ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE