Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > Samsung to double flash capacity, debuts 90-nm NAND

April 1st, 2004

Samsung to double flash capacity, debuts 90-nm NAND

Abstract:
Looking to extend its lead in flash memory, South Korea's Samsung Electronics Co. Ltd. plans to double its flash capacity and has begun shipping its first NAND part based on a new 90-nm process technology. On the product front, Samsung has begun shipping a 2-gigabit NAND device, built around the 90-nm process, said Tom Quinn, vice president of memory sales and marketing for the company's U.S unit, Samsung Semiconductor Inc., based in San Jose.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

A step towards keeping up with Moore's Law: POSTECH researchers develop a novel and efficient fabrication technology for cross-shaped memristor January 30th, 2016

Scientists build a neural network using plastic memristors: A group of Russian and Italian scientists have created a neural network based on polymeric memristors -- devices that can potentially be used to build fundamentally new computers January 28th, 2016

LC.300 Series Nanopositioning Controller from nPoint January 28th, 2016

First all-antiferromagnetic memory device could get digital data storage in a spin January 16th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic