Nanotechnology Now

Our NanoNews Digest Sponsors
Heifer International



Home > News > Samsung to double flash capacity, debuts 90-nm NAND

April 1st, 2004

Samsung to double flash capacity, debuts 90-nm NAND

Abstract:
Looking to extend its lead in flash memory, South Korea's Samsung Electronics Co. Ltd. plans to double its flash capacity and has begun shipping its first NAND part based on a new 90-nm process technology. On the product front, Samsung has begun shipping a 2-gigabit NAND device, built around the 90-nm process, said Tom Quinn, vice president of memory sales and marketing for the company's U.S unit, Samsung Semiconductor Inc., based in San Jose.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023

Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023

Rensselaer researcher uses artificial intelligence to discover new materials for advanced computing Trevor Rhone uses AI to identify two-dimensional van der Waals magnets May 12th, 2023

TUS researchers propose a simple, inexpensive approach to fabricating carbon nanotube wiring on plastic films: The proposed method produces wiring suitable for developing all-carbon devices, including flexible sensors and energy conversion and storage devices March 3rd, 2023

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project