Home > News > Nanowire transistors are turned on their end
March 25th, 2004
Nanowire transistors are turned on their end
Abstract:
Writing in Nano Letters, Pho Nguyen and colleagues demonstrate field effect transistors constructed from semiconducting indium oxide nanowires grown directly out of and vertical to a substrate's surface. This approach not only reduces the area taken up by individual transistors, but could potentially make it easier for them to be connected together to form complex circuits.
Source:
* Nature
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