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Home > News > Nanowire transistors are turned on their end

March 25th, 2004

Nanowire transistors are turned on their end

Writing in Nano Letters, Pho Nguyen and colleagues demonstrate field effect transistors constructed from semiconducting indium oxide nanowires grown directly out of and vertical to a substrate's surface. This approach not only reduces the area taken up by individual transistors, but could potentially make it easier for them to be connected together to form complex circuits.

* Nature

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