Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Nanowire transistors are turned on their end

March 25th, 2004

Nanowire transistors are turned on their end

Abstract:
Writing in Nano Letters, Pho Nguyen and colleagues demonstrate field effect transistors constructed from semiconducting indium oxide nanowires grown directly out of and vertical to a substrate's surface. This approach not only reduces the area taken up by individual transistors, but could potentially make it easier for them to be connected together to form complex circuits.

Source:
* Nature

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Explaining how 2-D materials break at the atomic level January 20th, 2017

New research helps to meet the challenges of nanotechnology: Research helps to make the most of nanoscale catalytic effects for nanotechnology January 20th, 2017

Ultra-precise chip-scale sensor detects unprecedentedly small changes at the nanoscale January 20th, 2017

Nanometrics to Announce Fourth Quarter and Full Year Financial Results on February 7, 2017 January 19th, 2017

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project