Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell

December 28th, 2003

Successful Development of New Next-Gen Non-Volatile Memory cell

Abstract:
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.

Source:
AGC

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Magnetic atoms arranged in neat rows: FAU physicists enable one-dimensional atom chains to grow August 5th, 2016

New metamaterials can change properties with a flick of a light-switch: Material can lead to new optical devices August 3rd, 2016

Making magnets flip like cats at room temperature: Heusler alloy NiMnSb could prove valuable as a new material for digital information processing and storage July 25th, 2016

Research team led by NUS scientists develop plastic flexible magnetic memory device: Novel technique to implant high-performance magnetic memory chip on a flexible plastic surface without compromising performance July 21st, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic