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Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell

December 28th, 2003

Successful Development of New Next-Gen Non-Volatile Memory cell

Abstract:
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.

Source:
AGC

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