Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell

December 28th, 2003

Successful Development of New Next-Gen Non-Volatile Memory cell

Abstract:
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.

Source:
AGC

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

DWI scientists program the lifetime of self-assembled nanostructures April 9th, 2015

Computers that mimic the function of the brain: A new step forward in memristor technology could bring us closer to brain-like computing April 6th, 2015

Mind the gap: Nanoscale speed bump could regulate plasmons for high-speed data flow April 1st, 2015

Next important step toward quantum computer: Scientists at the University of Bonn have succeeded in linking 2 different quantum systems March 30th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE