Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell
December 28th, 2003
Successful Development of New Next-Gen Non-Volatile Memory cell
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.
Relativity shakes a magnet: Researchers from Mainz University demonstrate a new principle for magnetic recording / Publication in Nature Nanotechnology March 4th, 2014
Advance in energy storage could speed up development of next-gen electronics February 19th, 2014
Ballistic transport in graphene suggests new type of electronic device February 5th, 2014
Highly Efficient Broadband Terahertz Radiation from Metamaterials January 18th, 2014