Home > News > IBM exploits self-assembly to make nanocrystal memory
December 17th, 2003
IBM exploits self-assembly to make nanocrystal memory
Abstract:
Researchers at IBM, US, have used self-assembly of polymer molecules to make a FLASH memory device. The scientists combined the technique with conventional semiconductor processing methods to create an array of silicon nanocrystals each with a diameter of around 20 nm.
Source:
Nanotechweb
Bookmark:
| Related News Press |
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
Self Assembly
Liquid crystal templated chiral nanomaterials October 14th, 2022
Nanoclusters self-organize into centimeter-scale hierarchical assemblies April 22nd, 2022
Atom by atom: building precise smaller nanoparticles with templates March 4th, 2022
Nanostructures get complex with electron equivalents: Nanoparticles of two different sizes break away from symmetrical designs January 14th, 2022
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||