Nanotechnology Now

• About Us
  
  • Advertising
  • Our Mission
  • Our Team
  • Comments
  • Friends
  • Contact
• Nanotechnology
• News
  
  • Current News
  • Press Releases
  • Submit Press
  • Press kit
  • Interviews
• Columns
• Products
  
  • Our Products
  • Books
  • Featured Books
• Directories
  
  • Companies/Academic
  • Events
  • Glossary
  • Best Of
• Career Center
• Nano-Social Network
• Nano Consulting
• My Account

Home > News > IBM exploits self-assembly to make nanocrystal memory

December 17th, 2003

IBM exploits self-assembly to make nanocrystal memory

Abstract:
Researchers at IBM, US, have used self-assembly of polymer molecules to make a FLASH memory device. The scientists combined the technique with conventional semiconductor processing methods to create an array of silicon nanocrystals each with a diameter of around 20 nm.

Source:
Nanotechweb

Bookmark:

Related News Press

Memory Technology

Imec showcases innovation in RRAM R&D at VLSI Technology Symposium June 14th, 2013

Data Highways for Quantum Information June 13th, 2013

Filmmaking magic with polymers June 12th, 2013

Leti Workshop on Innovative Memory Technologies to Include Samsung, Micron, SST-Microchip, Bosch, Altis Semiconductor and STMicroelectronics: June 27 Event to Explore Latest Results in Semiconductor Memory R&D June 5th, 2013

Self Assembly

Filmmaking magic with polymers June 12th, 2013

New microfluidic method expands toolbox for nanoparticle manipulation June 5th, 2013

Organic polymers show sunny potential: Rice, Penn State labs lay groundwork for block copolymer solar cells May 30th, 2013

Scientists at Tokyo Tech have developed a new self-assembled nanostructure that can survive very hot or saline environments May 27th, 2013