Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > SST, Powerchip team up to take 'SuperFlash' to 65-nm

December 2nd, 2003

SST, Powerchip team up to take 'SuperFlash' to 65-nm

Abstract:
Non-volatile memory developer Silicon Storage Technology Inc. (SST) has teamed up with Taiwanese DRAM maker Powerchip Semiconductor Corp. to develop a third generation of SST's SuperFlash memory, the company said Monday (Dec. 1). The self-aligned, third-generation SuperFlash cell is being based on a 110-nanometer manufacturing process at Powerchip with plans to scale it down to 90-nm and 65-nm production nodes.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Picosunís ALD solutions enable novel high-speed memories June 27th, 2017

New prospects for universal memory -- high speed of RAM and the capacity of flash: Thin films created at MIPT could be the basis for future development of ReRAM June 17th, 2017

Geoffrey Beach: Drawn to explore magnetism: Materials researcher is working on the magnetic memory of the future April 25th, 2017

New ultrafast flexible and transparent memory devices could herald new era of electronics April 1st, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project