Home > News > SST, Powerchip team up to take 'SuperFlash' to 65-nm
December 2nd, 2003
SST, Powerchip team up to take 'SuperFlash' to 65-nm
Abstract:
Non-volatile memory developer Silicon Storage Technology Inc. (SST) has teamed up with Taiwanese DRAM maker Powerchip Semiconductor Corp. to develop a third generation of SST's SuperFlash memory, the company said Monday (Dec. 1). The self-aligned, third-generation SuperFlash cell is being based on a 110-nanometer manufacturing process at Powerchip with plans to scale it down to 90-nm and 65-nm production nodes.
Source:
EETimes
Bookmark:
Memory Technology
IDTechEx launches online Market Intelligence Portal May 23rd, 2013
Whirlpools on the Nanoscale Could Multiply Magnetic Memory: At the Advanced Light Source, Berkeley Lab scientists join an international team to control spin orientation in magnetic nanodisks May 22nd, 2013
Imec and GLOBALFOUNDRIES collaborate to advance high-density memory technology: STT-MRAM offers enhanced performance and scalability for embedded and standalone applications May 21st, 2013
RUB physicists let magnetic dipoles interact on the nanoscale for the first time: 'Of great technical interest for future hard disk drives' May 15th, 2013