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Home > News > NEC, Tokuyama develop resist for 8-nm line widths

November 22nd, 2003

NEC, Tokuyama develop resist for 8-nm line widths

Abstract:
NEC Corp. and Tokuyama Corp. have jointly developed electron beam resist that enables etching an 8 nanometer line with a line edge roughness of less than 1 nm. The new resist is chloromethyl calix 4 arene, which consists of four benzene rings connected in a 0.7-nm diameter ring.

Source:
EETimes

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