Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > NEC, Tokuyama develop resist for 8-nm line widths

November 22nd, 2003

NEC, Tokuyama develop resist for 8-nm line widths

Abstract:
NEC Corp. and Tokuyama Corp. have jointly developed electron beam resist that enables etching an 8 nanometer line with a line edge roughness of less than 1 nm. The new resist is chloromethyl calix 4 arene, which consists of four benzene rings connected in a 0.7-nm diameter ring.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Nanometrics to Announce Third Quarter Financial Results on October 30, 2018 October 10th, 2018

Graphene controls surface magnetism at room temperature October 8th, 2018

UCI scientists push microscopy to sub-molecular resolution: Carbon monoxide used to measure electric forces in single chemical compound October 2nd, 2018

Machine learning helps improving photonic applications September 28th, 2018

Tools

Iranian Firm Offering Nano-Products on Chinese Market October 16th, 2018

Big award enables study of small surfaces: Rice U.'s Matt Jones wins Packard Fellowship to view nanoscale chemical reactions October 15th, 2018

Nanometrics to Announce Third Quarter Financial Results on October 30, 2018 October 10th, 2018

UCI scientists push microscopy to sub-molecular resolution: Carbon monoxide used to measure electric forces in single chemical compound October 2nd, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project