Home > News > NVE Achieves Record Tunnel Junction Magnetoresistance
November 13th, 2003
NVE Achieves Record Tunnel Junction Magnetoresistance
NVE Corporation (Nasdaq:NVEC) announced today that it has achieved the highest spin-dependent tunneling (SDT) junction magnetoresistance ever reported. Using unique materials, the company produced more than a 70% change in tunneling magnetoresistance (TMR) between two stable states at room temperature. Tunnel junctions, also known as magnetic tunnel junctions (MTJs) or tunneling magnetic junctions (TMJs), allow the esoteric property of electron spin to be sensed as electrical resistance for interface to conventional electronics.
Instant-start computers possible with new breakthrough December 19th, 2014
Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014
Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014
Graphene layer reads optical information from nanodiamonds electronically: Possible read head for quantum computers December 1st, 2014