Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > NVE Achieves Record Tunnel Junction Magnetoresistance

November 13th, 2003

NVE Achieves Record Tunnel Junction Magnetoresistance

Abstract:
NVE Corporation (Nasdaq:NVEC) announced today that it has achieved the highest spin-dependent tunneling (SDT) junction magnetoresistance ever reported. Using unique materials, the company produced more than a 70% change in tunneling magnetoresistance (TMR) between two stable states at room temperature. Tunnel junctions, also known as magnetic tunnel junctions (MTJs) or tunneling magnetic junctions (TMJs), allow the esoteric property of electron spin to be sensed as electrical resistance for interface to conventional electronics.

Source:
Businesswire

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

New materials for more powerful solar cells: Major breakthrough in solar energy November 11th, 2014

Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014

Superconducting circuits, simplified: New circuit design could unlock the power of experimental superconducting computer chips October 18th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More












ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE