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Home > News > NVE Achieves Record Tunnel Junction Magnetoresistance

November 13th, 2003

NVE Achieves Record Tunnel Junction Magnetoresistance

NVE Corporation (Nasdaq:NVEC) announced today that it has achieved the highest spin-dependent tunneling (SDT) junction magnetoresistance ever reported. Using unique materials, the company produced more than a 70% change in tunneling magnetoresistance (TMR) between two stable states at room temperature. Tunnel junctions, also known as magnetic tunnel junctions (MTJs) or tunneling magnetic junctions (TMJs), allow the esoteric property of electron spin to be sensed as electrical resistance for interface to conventional electronics.


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