Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > NVE Achieves Record Tunnel Junction Magnetoresistance

November 13th, 2003

NVE Achieves Record Tunnel Junction Magnetoresistance

Abstract:
NVE Corporation (Nasdaq:NVEC) announced today that it has achieved the highest spin-dependent tunneling (SDT) junction magnetoresistance ever reported. Using unique materials, the company produced more than a 70% change in tunneling magnetoresistance (TMR) between two stable states at room temperature. Tunnel junctions, also known as magnetic tunnel junctions (MTJs) or tunneling magnetic junctions (TMJs), allow the esoteric property of electron spin to be sensed as electrical resistance for interface to conventional electronics.

Source:
Businesswire

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

First on-chip nanoscale optical quantum memory developed: Smallest-yet optical quantum memory device is a storage medium for optical quantum networks with the potential to be scaled up for commercial use September 11th, 2017

High-speed quantum memory for photons September 9th, 2017

Fast magnetic writing of data September 7th, 2017

Bit data goes anti-skyrmions September 1st, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project