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September 18th, 2003
AMD readies multigate transistor for 45-nm node
Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node. Zoran Krivokapic, the lead researcher on the multigate project, based at the company's technology research group in Sunnyvale, Calif., reported that the transistor switching speed - expressed as CV/I, a measure of capacitance, voltage and current - was 0.26 picoseconds for the NMOS devices and 0.45 ps for the PMOS transistors. AMD said those are the fastest transistors reported to date for 20-nm gate length structures.
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