Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > AMD readies multigate transistor for 45-nm node

September 18th, 2003

AMD readies multigate transistor for 45-nm node

Abstract:
Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node. Zoran Krivokapic, the lead researcher on the multigate project, based at the company's technology research group in Sunnyvale, Calif., reported that the transistor switching speed - expressed as CV/I, a measure of capacitance, voltage and current - was 0.26 picoseconds for the NMOS devices and 0.45 ps for the PMOS transistors. AMD said those are the fastest transistors reported to date for 20-nm gate length structures.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Nanometrics Announces Upcoming Investor Events July 28th, 2015

Short wavelength plasmons observed in nanotubes: Berkeley Lab researchers create Ludinger liquid plasmons in metallic SWNTs July 28th, 2015

Quantum networks: Back and forth are not equal distances! July 28th, 2015

Superfast fluorescence sets new speed record: Plasmonic device has speed and efficiency to serve optical computers July 27th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project