Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > AMD readies multigate transistor for 45-nm node

September 18th, 2003

AMD readies multigate transistor for 45-nm node

Abstract:
Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node. Zoran Krivokapic, the lead researcher on the multigate project, based at the company's technology research group in Sunnyvale, Calif., reported that the transistor switching speed - expressed as CV/I, a measure of capacitance, voltage and current - was 0.26 picoseconds for the NMOS devices and 0.45 ps for the PMOS transistors. AMD said those are the fastest transistors reported to date for 20-nm gate length structures.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Materials for the next generation of electronics and photovoltaics: MacArthur Fellow develops new uses for carbon nanotubes October 21st, 2014

Nitrogen Doped Graphene Characterized by Iranian, Russian, German Scientists October 21st, 2014

Crystallizing the DNA nanotechnology dream: Scientists have designed the first large DNA crystals with precisely prescribed depths and complex 3D features, which could create revolutionary nanodevices October 20th, 2014

Imaging electric charge propagating along microbial nanowires October 20th, 2014

NanoNews-Digest
The latest news from around the world, FREE





  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE