Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > AMD readies multigate transistor for 45-nm node

September 18th, 2003

AMD readies multigate transistor for 45-nm node

Abstract:
Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node. Zoran Krivokapic, the lead researcher on the multigate project, based at the company's technology research group in Sunnyvale, Calif., reported that the transistor switching speed - expressed as CV/I, a measure of capacitance, voltage and current - was 0.26 picoseconds for the NMOS devices and 0.45 ps for the PMOS transistors. AMD said those are the fastest transistors reported to date for 20-nm gate length structures.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Quantum obstacle course changes material from superconductor to insulator December 1st, 2016

Bumpy surfaces, graphene beat the heat in devices: Rice University theory shows way to enhance heat sinks in future microelectronics November 29th, 2016

Scientists shrink electron gun to matchbox size: Terahertz technology has the potential to enable new applications November 25th, 2016

Uncovering the secrets of friction on graphene: Sliding on flexible graphene surfaces has been uncharted territory until now November 23rd, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project