Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > FinFETs could be used at 65-nm node

July 18th, 2003

FinFETs could be used at 65-nm node

Abstract:
The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

New pathway to valleytronics January 27th, 2015

Entanglement on a chip: Breakthrough promises secure communications and faster computers January 27th, 2015

Electronic circuits with reconfigurable pathways closer to reality January 26th, 2015

The latest fashion: Graphene edges can be tailor-made: Rice University theory shows it should be possible to tune material's properties January 24th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE