Nanotechnology Now





Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > FinFETs could be used at 65-nm node

July 18th, 2003

FinFETs could be used at 65-nm node

Abstract:
The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Fundamental observation of spin-controlled electrical conduction in metals: Ultrafast terahertz spectroscopy yields direct insight into the building block of modern magnetic memories July 6th, 2015

Transition from 3 to 2 dimensions increases conduction, MIPT scientists discover July 6th, 2015

Nanometrics to Announce Second Quarter Financial Results on July 23, 2015 July 2nd, 2015

The quantum middle man July 2nd, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project