Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > FinFETs could be used at 65-nm node

July 18th, 2003

FinFETs could be used at 65-nm node

Abstract:
The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

GraphExeter illuminates bright new future for flexible lighting devices June 23rd, 2016

Soft decoupling of organic molecules on metal June 23rd, 2016

Particle zoo in a quantum computer: First experimental quantum simulation of particle physics phenomena June 23rd, 2016

Nanometrics to Participate in the 8th Annual CEO Investor Summit: Investor Event Held Concurrently with SEMICON West 2016 in San Francisco June 22nd, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic