Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button


Home > News > FinFETs could be used at 65-nm node

July 18th, 2003

FinFETs could be used at 65-nm node

The FinFET, a transistor structure with a fin-like channel being touted as a way to scale silicon down to 10-nm gate lengths, could be used as early as the 65-nm process node, according to Calvin Chenming Hu, chief technology officer of Taiwan Semiconductor Manufacturing Co. Ltd.


Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Superconductivity trained to promote magnetization: Russian scientist and her colleagues discovered the superconductivity effect, which will help to create future supercomputers October 6th, 2015

Nanoscale photodetector shows promise to improve the capacity of photonic circuits: Researchers at the University of Rochester have fabricated a device in which light can induce a current using a silver nanowire -- an important step toward harnessing light to speed up the next ge October 6th, 2015

Harris & Harris Group Announces Receipt of Milestone Payment From Acquisition of Molecular Imprints by Canon October 5th, 2015

Horizontal magnetic tunneling in a field-effect device integrated on Silicon October 3rd, 2015

The latest news from around the world, FREE

  Premium Products
Only the news you want to read!
 Learn More
University Technology Transfer & Patents
 Learn More
Full-service, expert consulting
 Learn More

Nanotechnology Now Featured Books


The Hunger Project

Car Brands
Buy website traffic