Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > IBM-Infineon team discloses MRAM at VLSI symposium

June 10th, 2003

IBM-Infineon team discloses MRAM at VLSI symposium

Abstract:
Magneto-resistive random access memory (MRAM) technology continues to pick up critical momentum, with the MRAM Alliance between IBM and Infineon Technologies announcing prototype MRAM arrays at the 2003 Symposium on VLSI Technology.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014

Graphene layer reads optical information from nanodiamonds electronically: Possible read head for quantum computers December 1st, 2014

'Giant' charge density disturbances discovered in nanomaterials: Juelich researchers amplify Friedel oscillations in thin metallic films November 26th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE